Ferroelectric Polarization Effects on the Transport Properties of Graphene/PMN-PT Field Effect Transistors

Abstract

Single-layer graphene was transferred onto (1 − x)[Pb(Mg 1/3 Nb 2/3 )O 3 ]−x[PbTiO 3 ] 0.3 (PMN-PT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The graphene/PMN-PT FET exhibited p-type characteristics with a large memory window and an on/off current ratio of about 5.5 in air ambient conditions at room temperature. By prepoling the PMN-PT substrate, the FET showed a reduction in p-doping for the graphene/PMN-PT FET, implying the pre-polarization and the polarization reversal played an important part in the behaviors of graphene on PMN-PT. The observation of simultaneous rise in gate current with the dramatic transition in drain current suggested that the transport properties of graphene mainly stemmed from the coupling of the ferroelectric polarization to the charge carriers in graphene. The field effect mobility and the excess hole concentration were calculated to be about 4.52 × 10 3 cm 2 V −1 s −1 and 6.74 × 10 12 cm −2 , respectively. Furthermore, the sheet resistance showed high dependence on temperature and gate voltage, indicating metallic behaviors of graphene on PMN-PT. Additionally, the sheet resistance of graphene on the PMN-PT was much smaller than that on SiO 2 .

Anisotropic domain switching in Pb(Mg1/3Nb2/3)O3‐0.30PbTiO3 single crystals with rhombohedral structure

“…Over the past decades, researches concerning high piezoelectric property near MPB have been in a privileged position, but much less attention is devoted to ferroelectric properties. Until recently, the PMN‐ x PT crystals have been increasingly utilized as critical components in strain‐mediated magnetoelectric coupling multiferroic devices, nonvolatile memories and field‐effect transistors . Therefore, a growing number of scientists gradually pay more attention to the ferroelectric characteristics of the PMN‐ x PT crystals …”

“…Until recently, the PMN‐ x PT crystals have been increasingly utilized as critical components in strain‐mediated magnetoelectric coupling multiferroic devices, nonvolatile memories and field‐effect transistors . Therefore, a growing number of scientists gradually pay more attention to the ferroelectric characteristics of the PMN‐ x PT crystals …”

“…Recently, there has been considerable interest in ferroelectric properties, that is, polarization switching, in PMN‐ x PT single crystals for application in novel ferroelectric‐based devices . Under an alternative electric field, the domain switching via domain walls movement was confirmed in [001]‐poled PMN‐0.32PT crystals by in situ PLM .…”

Temperature-dependent electrical transport properties in graphene/Pb(Zr0.4Ti0.6)O3 field effect transistors

“…Among them, ferroelectric thin films stand out due to its electrically switchable spontaneous polarization and its high permittivity [4][5]. Recently, organic and inorganic ferroelectric materials such as Pb(Zr 1Àx Ti x )O 3 (PZT) [6][7][8], (1 À x)[Pb(Mg 1/3 Nb 2/3 )O 3 ] À x[PbTiO 3 ] (PMN-PT) [9], P(VDF-TrFE) [10][11][12], et al have been incorporated with graphene into FETs. Such ferroelectric GFETs exhibit a strong interaction between the ferroelectric gate dielectrics and graphene, which can be utilized as alternative means of nonvolatile information storage.…”

Nature Driven Bio‐Piezoelectric/Triboelectric Nanogenerator as Next‐Generation Green Energy Harvester for Smart and Pollution Free Society

“…[115] The hysteresis loop (P-E) at different applied voltages for chitin thin film was carried out and resulted various typical ferroelectric P-E loops (Figure 5f), which are possible due to the permanent dipoles rotation in β-rich crystalline chitin film with respect to the external applying electric field (ε r ≈ 4). [128] Remnant polarization (P r ) at 0 V also supported the ferroelectric property inside crystalline chitin thin film. Interestingly, the ferroelectric nature could be well monitored even at high temperature because of lack of Curie temperature.…”