Ferroelectric polarization control of spin states in Mn4N/PMN-PT heterostructures revealed by topological Hall effect

Wang, G. L.; Wu, Shuxiang; Zhou, Wenqi; Li, H. W.; Li, D.; Tian, Decheng; Kang, Shiyang; Dang, Shuai; Y., X.; Hu, Ping; Li, S. W.

doi:10.1063/1.5043194

Cited by 9 publications

(7 citation statements)

References 28 publications

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“…The tunable AHE has been observed in Mn 4 N/heavy metal heterostructure [81]. Meanwhile, the THE induced by noncoplanar spin structures in the Mn 4 N based heterostructures also provides an approach to modulate the spin states [64,70]. In order to explore the nonmagnetic methods for manipulating spin, the topological spin textures and intrinsic mechanism should be addressed in the Mn 4 N based heterostructures.…”

Section: Discussionmentioning

confidence: 99%

“…The linear relation gradually disappears at magnetic field above 9 kOe, where the magnetization and ρ AH reach the saturated values. In addition to the Mn 4 N films on MgO substrates, the transport properties of Mn 4 N/PMN-PT heterostructure were studied in 2018 [70]. The Hall resistivity ρ xy of Mn 4 N/PMN-PT heterostructure measured from 5 K to 25 K. There is a hump structure of the ρ xy -H at 5 K, which is absent in the anomalous Hall resistivity at 8 K-25 K. The appearance of hump structure is related to the additional topological Hall signal.…”

Section: Ahementioning

confidence: 99%

“…In 2018, Wang et al investigated the transport properties of Mn 4 N films manipulated by the ferroelectric polarization of PMN-PT [70]. The manipulation of spin states in Mn 4 N films could be explained by topological Hall effect (THE).…”

Section: Ferroelectric Polarization Control Of Spin Statesmentioning

confidence: 99%

“…The Mn 3 NiN films exhibits different magnetic order with the in-plane strain, which paves a new way to manipulate the magnetic properties by piezoelectric effect. Additionally, the modification of AHE and THE in Mn 4 N based heterostructures is induced by different ways, which provides non-magnetic method for manipulation of spin states in magnetic materials [70,81].…”

Section: Practical Applicationsmentioning

confidence: 99%

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Progress in ferrimagnetic Mn₄N films and its heterostructures for spintronics applications

Zhang

2021

J. Phys. D: Appl. Phys.

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Mn4N is a typical transition metal nitride with antiperovskite structure. Mn4N films and Mn4N based heterostructures have attracted much attention for potential applications due to their ferrimagnetism, high thermal stability, perpendicular magnetic anisotropy and low saturation magnetization. The fascinating physical properties promise a series of novel applications in next-generation electronic, memory and energy-efficient devices. In this review, the progress of Mn4N films and its heterostructures are systematically summarized and discussed. In the 1st part, the various Mn–N compounds with different phases are introduced, and the basic properties of manganese nitrides are emphasized in details, especially for the properties, superiorities and applications in spintronics of Mn4N. The 2nd part summarizes the fabrication methods, structure and physical properties of Mn4N films. Besides, the underlying mechanisms of Mn4N films and other similar materials are briefly reviewed. In the 3rd part, the tunable magnetic properties of Mn4N films are discussed, including the manipulations methods of different Mn4N heterostructures in recent years. The 4th part highlights the physical properties of Mn4N films doped with other metals, including Co, Ni, and other heavy metal elements. The 5th part illustrates the potential applications of Mn4N films based on the physical properties discussed before. Finally, challenges and future prospects for Mn4N films are discussed, which could provide guidance for developing novel applications and designing functional devices.

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Section: Discussionmentioning

confidence: 99%

Section: Ahementioning

confidence: 99%

Section: Ferroelectric Polarization Control Of Spin Statesmentioning

confidence: 99%

Section: Practical Applicationsmentioning

confidence: 99%

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Progress in ferrimagnetic Mn₄N films and its heterostructures for spintronics applications

Zhang

2021

J. Phys. D: Appl. Phys.

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“…This emphasizes the advantage of piezoelectric strain in efficiently controlling antiferromagnetism . In addition, piezoelectric control of antiferromagnetically coupled spins has been theoretically proposed in honeycomb 2D antiferromagnets with inversion symmetry and experimentally observed in Mn 3 N and antiperovskite Mn 3 NiN …”

Section: Antiferromagnetic Piezospintronicsmentioning

confidence: 88%

Antiferromagnetic Piezospintronics

Liu

Feng

Yan

et al. 2019

Adv Elect Materials

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antiferromagnet involves the antiferromagnetic exchange field H E as well due to spin canting via ω AFM ≈ ≈ 2 E A SF r H H rH , where r is the gyromagnetic ratio of an electron. It can be three orders of magnitude higher than that of ferromagnets ω FM ≈ rH A (typically GHz) and reaches THz. For example, the study on the laser-induced spin reorientation in antiferromagnetic TmFeO 3 in 2004 shows that the antiferromagnetic spins can be manipulated on a timescale of a few picoseconds. [1] In 2006, Núñes et al. proposed a pioneering theory that spin transfer torques can induce the order parameter orientation switching in antiferromagnetic metals, which is well similar to the ferromagnetic case. [2] However, they pointed out that compared with the ferromagnetic case, the critical current for antiferromagnetic order parameter switching can be smaller because of the absence of shape anisotropy and also because spin torques can act through the entire volume of an antiferromagnet. On the other hand, as the magnetic order in an antiferromagnet is staggered, only correspondingly staggered torques can drive coherent order parameter switching. Soon in 2007, different experimental groups demonstrated that the exchange bias of a ferromagnet/antiferromagnet bilayer system can be altered by a current and thus provided indirect evidences for current-induced torques in antiferromagnetic metals. [3][4][5] Subsequently, Gomonaȋand Loktev proposed the phenomenological model that describes the spin transfer torques in antiferromagnets. [6,7] These early studies were summarized by MacDonald and Tsoi in the review paper that emphasizes the concept of antiferromagnetic metal spintronics [8] and also by Gomonay and Loktev in the review paper that emphasizes spintronics of antiferromagnetic systems from a theoretical point of view. [9] In 2011, Park et al. creatively reversed the stacking order of the antiferromagnetic layer IrMn and the ferromagnetic layer NiFe in a spin-valve-like tunnel junction structure, where the antiferromagnetic IrMn served as the key functional layer for generating tunnel anisotropic magnetoresistance, while the ferromagnetic NiFe layer was utilized to rotate the antiferromagnetic spin axis of IrMn via the interfacial exchange spring effect. [10] Surprisingly, a more than 100% tunneling anisotropic magnetoresistance was achieved at 4 K. This device proves that antiferromagnetic materials could work as pivotal components in spintronic devices instead of simply serving as pinning Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈THz), and higher packing density due to the absence of any stray field. Recently, antiferromagnetic spintronics has emerged as a cutting-edge field in the magnetism community.The key mission of this rapidly rising field is to steer the spins or spin axes of antiferromagnets via external stimuli and then realize advanced devices based on their physical property cha...

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Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications

Isogami

Takahashi

2022

Adv Elect Materials

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Light elements having 2p electrons such as B, C, and N are common elements that have played an important role in various functional materials. In particular, nitrides have long been used in the development of semiconductors, superconductors, and magnets. More recently, Fe‐ and Mn‐based antiperovskite‐type compounds with light elements have attracted considerable attention in the field of spintronic engineering, because of the development of intriguing and practical applications making them one of the key materials for future devices. In this article, it is first reviewed the evolution of applications and which light elements are employed. Then the representative applications and characteristics of the light elements, including magnetoresistive effects, magnetization switching, current‐spin and thermoelectric conversions, magnetic anisotropy, and domain nucleation are individually highlighted. Additionally, the crystal structure, fundamental properties, and theoretical study are addressed to enable a deeper understanding of the role of light elements in the unit cell. Beyond compounds with N, a demonstration using B and C is discussed to examine their effect on the magnetic structures of antiperovskite compounds. Finally, prospective and future strategies are discussed to build a platform of practical material based on light elements.

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Ferroelectric polarization control of spin states in Mn4N/PMN-PT heterostructures revealed by topological Hall effect

Cited by 9 publications

References 28 publications

Progress in ferrimagnetic Mn₄N films and its heterostructures for spintronics applications

Progress in ferrimagnetic Mn₄N films and its heterostructures for spintronics applications

Antiferromagnetic Piezospintronics

Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications

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Ferroelectric polarization control of spin states in Mn4N/PMN-PT heterostructures revealed by topological Hall effect

Cited by 9 publications

References 28 publications

Progress in ferrimagnetic Mn4N films and its heterostructures for spintronics applications

Progress in ferrimagnetic Mn4N films and its heterostructures for spintronics applications

Antiferromagnetic Piezospintronics

Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications

Contact Info

Product

Resources

About

Progress in ferrimagnetic Mn₄N films and its heterostructures for spintronics applications

Progress in ferrimagnetic Mn₄N films and its heterostructures for spintronics applications