Ferroelectric Phase Shifters Operating in Digital-Analog Regime

Sengupta, L. C.; DuToit, Cornelius; Chen, Shuguang; Kozyrev, A. B.; Osadchy, V.N.; Павлов, А. С.; Kosmin, D.M.

doi:10.1080/10584580590926675

Cited by 8 publications

(3 citation statements)

References 3 publications

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“…[1][2][3][4] The main parameter of such devices is the switching time, which is the time of resonance frequency or phase-shift tuning under the short control pulse voltage with duration of scale ͑10 −3 −1͒ s. In the paraelectric state under harmonical microwave E-field there is no frequency dispersion for nonlinear response of BSTO permittivity up to ϳ100 GHz ͑a frequency corresponding to the period of the lattice soft mode oscillation of FE͒. The nonlinearity in FE dielectric permittivity ͑͒ under applied electrical field enables the development of a variety of tunable devices: phase shifters, tuneable filters, delay lines, etc.…”

Section: Effect Of Ultraviolet Radiation On Slow-relaxation Processesmentioning

confidence: 99%

“…[1][2][3][4] The main parameter of such devices is the switching time, which is the time of resonance frequency or phase-shift tuning under the short control pulse voltage with duration of scale ͑10 −3 −1͒ s. In the paraelectric state under harmonical microwave E-field there is no frequency dispersion for nonlinear response of BSTO permittivity up to ϳ100 GHz ͑a frequency corresponding to the period of the lattice soft mode oscillation of FE͒. 3,8 Such a dependence will result in ambiguity in phase and frequency control of the FE microwave devices. Besides the fast response process ͑soft mode response, Ͻ1 ns͒, there are slowrelaxation processes, which cause up to 10% of the capacitance value to relax ͑i.e., return to initial state after the pulse duration͒ for a time ϳ 10 3 s. [5][6][7] This phenomenon is schematically presented in Fig.…”

Section: Effect Of Ultraviolet Radiation On Slow-relaxation Processesmentioning

confidence: 99%

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Effect of ultraviolet radiation on slow-relaxation processes in ferroelectric capacitance structures

Petrov

Alford

Kozyrev

et al. 2010

Journal of Applied Physics

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Articles you may be interested inModification of energy band alignment and electric properties of Pt/Ba0.6Sr0.4TiO3/Pt thin-film ferroelectric varactors by Ag impurities at interfaces Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere Appl. Phys. Lett.The effects of ultraviolet ͑UV͒ irradiation on the relaxation processes in Ba 0.3 Sr 0.7 TiO 3 thin film capacitors were experimentally investigated in a range of wavelengths = ͑310-400͒ nm. It was observed that irradiation with a specific wavelength reduces the time of slow capacitance relaxation up to three orders of magnitude in comparison with relaxation time in the "dark" regime. It was also observed that at a certain wavelength of UV irradiation there was a maximum in the leakage current of the capacitors. This wavelength corresponded exactly with a minimum in the relaxation time of the capacitance. It was shown that the decrease in the ferroelectric film thickness resulted in a shift in ͑͒minima and I͑͒maxima towards the shorter wavelengths. Phenomena observed are analyzed using Bouguer's law.

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Section: Effect Of Ultraviolet Radiation On Slow-relaxation Processesmentioning

confidence: 99%

“…[1][2][3][4] The main parameter of such devices is the switching time, which is the time of resonance frequency or phase-shift tuning under the short control pulse voltage with duration of scale ͑10 −3 −1͒ s. In the paraelectric state under harmonical microwave E-field there is no frequency dispersion for nonlinear response of BSTO permittivity up to ϳ100 GHz ͑a frequency corresponding to the period of the lattice soft mode oscillation of FE͒. 3,8 Such a dependence will result in ambiguity in phase and frequency control of the FE microwave devices. Besides the fast response process ͑soft mode response, Ͻ1 ns͒, there are slowrelaxation processes, which cause up to 10% of the capacitance value to relax ͑i.e., return to initial state after the pulse duration͒ for a time ϳ 10 3 s. [5][6][7] This phenomenon is schematically presented in Fig.…”

Section: Effect Of Ultraviolet Radiation On Slow-relaxation Processesmentioning

confidence: 99%

Effect of ultraviolet radiation on slow-relaxation processes in ferroelectric capacitance structures

Petrov

Alford

Kozyrev

et al. 2010

Journal of Applied Physics

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“…These advantages make them an attractive candidate for microwave applications. Over the past decade, many proof-of-concept demonstrations have been made [1][2][3][4][5][6][7]. For phase shifters, figures of merit up to 120 • /dB of phase shift per insertion loss have been shown for continuous 360 • tuning [5].…”

Section: Introductionmentioning

confidence: 99%

A LARGE SCALE PRODUCTION TEST OF THIN FILM Ba_xSr_1−xTiO₃MICROWAVE PHASE SHIFTERS FABRICATED ON LaAlO₃SUBSTRATES

Keuls

Varaljay

Mueller³

et al. 2005

Integrated Ferroelectrics

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Many individual tunable ferroelectric-based microwave components have demonstrated excellent performance. However data on the production of many identical devices has been lacking. This paper will present data from NASA Glenn Research Center's fabrication of 822 phase shifters using commercially obtained pulsed laser deposited Ba x Sr 1−x TiO 3 (BST) thin films. These phase shifters of identical design were fabricated on 31 BST-coated LaAlO 3 wafers. Issues of phase shifter performance, repeatability, yield, and long term stability will be addressed. Phase shifter tunability and insertion losses will be compared with BST microstructural film characteristics and also with manufacturing induced physical variations in the electrodes.

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Time tuning of ferroelectric film varactors under pulse voltages

Kozyrev

Osadchy

Kosmin

et al. 2007

Applied Physics Letters

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Significant difference in the capacitance tunability of paraelectric state ferroelectric capacitors under dc and pulse voltages is demonstrated. Along with a fast tuning (τ<10ns) the slow relaxation processes (τ⩾100s) responsible for up to ∼30% variation of the capacitance were observed. The observed effect is a main obstacle for application of paraelectric state ferroelectrics on microwaves.

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Ferroelectric Phase Shifters Operating in Digital-Analog Regime

Cited by 8 publications

References 3 publications

Effect of ultraviolet radiation on slow-relaxation processes in ferroelectric capacitance structures

Effect of ultraviolet radiation on slow-relaxation processes in ferroelectric capacitance structures

A LARGE SCALE PRODUCTION TEST OF THIN FILM Ba_xSr_1−xTiO₃MICROWAVE PHASE SHIFTERS FABRICATED ON LaAlO₃SUBSTRATES

Time tuning of ferroelectric film varactors under pulse voltages

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Ferroelectric Phase Shifters Operating in Digital-Analog Regime

Cited by 8 publications

References 3 publications

Effect of ultraviolet radiation on slow-relaxation processes in ferroelectric capacitance structures

Effect of ultraviolet radiation on slow-relaxation processes in ferroelectric capacitance structures

A LARGE SCALE PRODUCTION TEST OF THIN FILM BaxSr1−xTiO3MICROWAVE PHASE SHIFTERS FABRICATED ON LaAlO3SUBSTRATES

Time tuning of ferroelectric film varactors under pulse voltages

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A LARGE SCALE PRODUCTION TEST OF THIN FILM Ba_xSr_1−xTiO₃MICROWAVE PHASE SHIFTERS FABRICATED ON LaAlO₃SUBSTRATES