Ferroelectric nanodomains in epitaxial PbTiO3 films grown on SmScO3 and TbScO3 substrates

Borodavka, Fedir; Gregora, I.; Bartasyte, Ausrine; Margueron, Samuel; Plaušinaitienė, Valentina; Abrutis, A.; Hlinka, J.

doi:10.1063/1.4801966

Cited by 32 publications

(22 citation statements)

References 42 publications

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“…These variants define micron-size 'superdomains' with a resultant inplane component of polarization along the [110] and [1][2][3][4][5][6][7][8][9][10] directions (see wide blue arrows). Similar patterns have been observed in single crystals of BaTiO 3 (lamellae and dots) 12,14,15 , dots of PZT 17 and lamellae of PZN-PT 18 , as well as in relatively thick PZT and PbTiO 3 films 38,39 , which included a fraction of domains with out-of-plane polarization and partial strain relaxation by dislocations. The DWs between superdomains are observed along both o1004 and o1104 crystallographic directions (see Fig.…”

Section: Resultssupporting

confidence: 56%

Super switching and control of in-plane ferroelectric nanodomains in strained thin films

et al. 2014

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With shrinking device sizes, controlling domain formation in nanoferroelectrics becomes crucial. Periodic nanodomains that self-organize into so-called 'superdomains' have been recently observed, mainly at crystal edges or in laterally confined nanoobjects. Here we show that in extended, strain-engineered thin films, superdomains with purely in-plane polarization form to mimic the single-domain ground state, a new insight that allows a priori design of these hierarchical domain architectures. Importantly, superdomains behave like strain-neutral entities whose resultant polarization can be reversibly switched by 90°, offering promising perspectives for novel device geometries.

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Section: Resultssupporting

confidence: 56%

Super switching and control of in-plane ferroelectric nanodomains in strained thin films

et al. 2014

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“…4,[11][12][13][14] These predictions have also been supported by experimental works mainly conducted on (001) tetragonal films. Compressive misfit strain favors c domains for epitaxial films whose thicknesses are below the critical value for relaxation, [15][16][17][18][19] and a/c patterns for relaxed films. 20,21 On the other hand, depending upon film thickness, substrate lattice parameters and processing conditions, tensile misfit strain can result in formation of either cross-hatched or stripe a/c patterns, 15 ultra-dense array with an inter-wall spacing of only 10nm was achieved 26 and reconfigurable robust charged domain walls were created without the need of complex poling procedures.…”

Section: Introductionmentioning

confidence: 99%

Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O3 thin films: Impact on domain compliance and piezoelectric properties

et al. 2016

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While there is extensive literature on the influence of both compressive and tensile strain on the domain patterns of (001) tetragonal ferroelectric thin films, little is known regarding domain engineering in (110) films. The primary reason is the absence of suitable substrates that allow the growth of epitaxial films with this orientation. However, recent works emphasized the importance of this orientation with the possibility for e.g. to achieve ultra-high ferroelectric domain density. This work reports the controlled growth of a/c domain patterns in highly tetragonal monocrystalline (110) oriented Pb(Zr0.05, Ti0.95)O3. It is demonstrated that while a/c patterns can easily be realized in the single layer film relaxed under compressive misfit strain, modulation of tensile misfit strain through the use of buffer layers allows for consistent control of domain periodicity, in which case the average domain period was tuned between 630 and 60 nm. The effects of domain density and defects on both switching behavior and piezoelectric properties in single and multilayered structures are also investigated, revealing an optimum composition of the buffer layer for improved domain compliance and piezoelectric properties.

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“…in Refs. 29,30. IR reflectivity and time-domain THz transmission data were collected using a Fourier-transform Bruker spectrometer and a laboratory built system based on Ti-Sapphire laser, respectively, and then fitted simultaneously to obtain the consistent complex dielectric and conductivity spectra in the 10-800 cm −1 range (the same setup and experimental procedure as e.g.…”

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confidence: 99%

Multiple Soft-Mode Vibrations of Lead Zirconate

et al. 2014

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Polarized Raman, IR and time-domain THz spectroscopy of orthorhombic lead zirconate single crystals yielded a comprehensive picture of temperature-dependent quasiharmonic frequencies of its low-frequency phonon modes. It is argued that these modes primarily involve vibration of Pb and/or oxygen octahedra librations and their relation to particular phonon modes of the parent cubic phase is proposed. Counts of the observed IR and Raman active modes belonging to distinct irreducible representations agree quite well with group-theory predictions. The most remarkable finding is the considerably enhanced frequency renormalization of the y-polarized polar modes, resulting in a pronounced low temperature dielectric anisotropy. Results are discussed in terms of contemporary phenomenological theory of antiferroelectricity.PACS numbers: 77.80.Bh, 77.84.Cg Although the ferroelectric and antiferroelectric materials have a lot in common, the latter have been much less investigated. An obvious reason is the absence of the direct linear coupling of the antiferroelectric (AF) order parameter to the macroscopic electric field.At the same time, a nonlinear coupling to the macroscopic electric field is still present. Therefore, AF materials actually do provide interesting functionalities, as well. In fact, the AF oxides are promising materials for high-energy storage capacitors, high-strain actuators and perhaps even for electrocaloric refrigerators [1][2][3]. The interest in the improvement of our understanding of AF oxides has been expressed recently [1,2,4,5].Lead zirconate, PbZrO 3 , is the best known example of an AF oxide -it is an end-member of technologically relevant solid solutions with PbTiO 3 (piezoelectric PZTs) [1,2,4,[6][7][8]. The parent paraelectric phase is a simple cubic perovskite with a 5-atom unit cell (P m3m, Z=1). Below the AF phase transition (T C ∼ 500 K), it goes over into an orthorhombic P bam (Z=8) structure [10,11]. The space-group symmetry change can be well understood[1] as a result of the condensation of two order parameters [1,4,9,12]. One of them is a polarization wave of a propagation vector Q Σ = (0.25, 0.25, 0) pc , the other order parameter is a Q R = (0.5, 0.5, 0.5) pc oxygen octahedra tilt mode (here pc stands for pseudocubic lattice, see Figs. 1-2).Superpositions of Q Σ , Q R include also Γ, X, M and Q S = (0.25, 0.25, 0.5) pc cubic-phase Brillouin zone points. All of these points become Brillouin zone centers in the P bam phase (see Fig. 2). Nevertheless, recent inelastic X-ray scattering experiments [4] have clearly demonstrated that the critical scattering occurs only in the vicinity of the Γ-point. Based on this experimental result, it was proposed that the AF phase transition is driven by a single mode, the Γ-point ferroelectric soft mode [4]. Within this model, the condensation of the Q Σ -point mode can be ascribed to the flexoelectric coupling with the ferroelectric mode, and the condensation of the Q R -point mode can be explained as due to a biquadratic coupling with the Q Σ m...

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Ferroelectric nanodomains in epitaxial PbTiO3 films grown on SmScO3 and TbScO3 substrates

Cited by 32 publications

References 42 publications

Super switching and control of in-plane ferroelectric nanodomains in strained thin films

Super switching and control of in-plane ferroelectric nanodomains in strained thin films

Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O3 thin films: Impact on domain compliance and piezoelectric properties

Multiple Soft-Mode Vibrations of Lead Zirconate

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