Ferroelectric memories

Ferroelectric and microstructural characteristics of SrBi2Ta2O9 thin films crystallized by the rapid thermal annealing process

“…[1][2][3] Among the Bi-layered family, SrBi 2 Ta 2 O 9 ͑SBT͒ has been the most studied. Many groups have prepared SBT films by several techniques, such as pulsed laser deposition, 4,5 rf sputtering, 6 metalorganic chemical vapor deposition, 7 and by chemical solution, basically metalorganic decomposition 3,8,9 and the sol-gel process.…”

Preparation by Sol-Gel Method and Characterizations of (Bi<SUB>4-x</SUB>La<SUB>x</SUB>)Ti<SUB>3</SUB>O<SUB>12</SUB> Thin Films

“…[1][2][3][4] For the applications such as nonvolatile memories, ferroelectrics with low coercive field and fatigue-free in the cycle of polarization reverse are desirable, 5) and from the sustainable development point of view, the thin films without toxicity (such as lead-free materials) are also very important. So, the Aurivillius family A nÀ1 Bi 2 B n O 3nþ3 ferroelectric materials with perovskite-like structure, which are typical lead-free materials, have attracted great interest in the last years because of their excellent electrical and optical properties.…”

Structural study of the PbZr0.52Ti0.48O3under Hydrostatic Pressure

“…Lead zirconate titanate Pb (Ti 1-x Zr x )O 3 (PZT) ceramics exhibit high piezoelectric and pyroelectric properties and thus are widely used as sensors and actuators [1] and numerous investigations of chemical and physical properties of the solid solution have been paid [2,3]. These materials are known for their unusual phase boundary, called the morphotropic phase boundary (MPB) [4], which occurs at around 50% Zr substitution for Ti in PbTiO 3 , and which separates the structural rhombohedral phase of the Zr rich region and the structural tetragonal phase of the Ti-rich region.…”