2019
DOI: 10.1063/1.5116134
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Ferroelectric films on metal substrates: The role of thermal expansion mismatch on dielectric, piezoelectric, and pyroelectric properties

Abstract: We present here a comprehensive analysis of the effect of thermal stresses on the functional properties of ferroelectric oxides on metal substrates. We use a Landau-Devonshire formalism to quantitatively assess the role of in-plane thermal strains that arise from the coefficient of thermal expansion (CTE) mismatch between lead zirconate titanate [PbZrxTi1–xO3, PZT x/(1 – x)] films and Al, Cu, Fe, Ni, and Ti-based substrates. Specifically, we compute Curie transition temperatures, spontaneous polarizations, die… Show more

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Cited by 7 publications
(7 citation statements)
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“…[7][8][9][10][11][12] In the development of micro/nano-electromechanical systems, to broaden the temperature range of the device, a ternary relaxor ferroelectric thin film with a high Curie point was proposed. [6][7][8] A high Curie temperature (T C ) of 215℃ together with remnant polarization P r of 5.5 µC cm −2 and coercive field E C of 1.35 kV mm −1 of PIMNT(30/38/32) ternary thin films deposited on (110)-oriented MgO substrates were obtained by a sputter deposition method. 13 Although Kang et al fabricated a PIMNT (24/43/33) film which exhibited a high curie temperature (T C ) of 255℃ by using aerosol deposition (AD) and annealing processes, the films resulted in poor deposition uniformity and large leakage current.…”
Section: Methodsmentioning
confidence: 99%
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“…[7][8][9][10][11][12] In the development of micro/nano-electromechanical systems, to broaden the temperature range of the device, a ternary relaxor ferroelectric thin film with a high Curie point was proposed. [6][7][8] A high Curie temperature (T C ) of 215℃ together with remnant polarization P r of 5.5 µC cm −2 and coercive field E C of 1.35 kV mm −1 of PIMNT(30/38/32) ternary thin films deposited on (110)-oriented MgO substrates were obtained by a sputter deposition method. 13 Although Kang et al fabricated a PIMNT (24/43/33) film which exhibited a high curie temperature (T C ) of 255℃ by using aerosol deposition (AD) and annealing processes, the films resulted in poor deposition uniformity and large leakage current.…”
Section: Methodsmentioning
confidence: 99%
“…6 Although a remnant polarization P r of 17 μC cm −2 , coercive field E C of 6.35 kV mm −1 , and pyroelectric coefficient p of 9.4 × 10 −4 C m −2 K −1 of PMNT binary thin films has been reported recently, the relatively low Curie temperature of PMNT films limited their usage temperature range for device applications. [7][8][9][10][11][12] In the development of micro/nano-electromechanical systems, to broaden the temperature range of the device, a ternary relaxor ferroelectric thin film with a high Curie point was proposed. [6][7][8] A high Curie temperature (T C ) of 215℃ together with remnant polarization P r of 5.5 µC cm −2 and coercive field E C of 1.35 kV mm −1 of PIMNT(30/38/32) ternary thin films deposited on (110)-oriented MgO substrates were obtained by a sputter deposition method.…”
Section: Methodsmentioning
confidence: 99%
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“…Therefore, the possibility of integrating (or built-in) a functionality into structural materials, which are primarily metals and their alloys, will create the possibility of real-time health monitoring of the structural components (of constructions and devices) and extend the maintenance cycle of components. Moreover, it will create the possibility of developing new structural functional systems [22].…”
Section: Introductionmentioning
confidence: 99%