Ferroelectric diode-like resistive switching behavior in Bi0.95Er0.05FeO3/CuFe2O4 heterostructures for non-volatile memories

Li, Di; Liu, Wenlong; Zong, Jin; Wei, Jiahua; Liu, Shuxian; Tan, Guoqiang; Yuan, Qibin; Liu, Dinghan; Xia, Ao; Yang, Haibo

doi:10.1016/j.apmt.2024.102074

Cited by 1 publication

(1 citation statement)

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“…The switching mechanism of digital memristors is usually filamentary, while analogue ones may have either filamentary, with parallel filaments defining the resistive levels [4,5], or nonfilamentary mechanisms, based on an interfacial switching mechanism [6]. With its unique volatile or non-volatile resistive switching behaviour, this circuit element (the fourth most common apart from the inductor, capacitor, and resistor) can be used in a variety of modern applications such as memory devices [7][8][9][10][11][12][13], sensing [14][15][16], image processing [17,18], and neuromorphic computing [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities

Knapic,

Minenkov,

Atanasova

et al. 2024

Nanomaterials

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A broad compositional range of Nb-Ti anodic memristors with volatile and self-rectifying behaviour was studied using a combinatorial screening approach. A Nb-Ti thin-film combinatorial library was co-deposited by sputtering, serving as the bottom electrode for the memristive devices. The library, with a compositional spread ranging between 22 and 64 at.% Ti was anodically oxidised, the mixed oxide being the active layer in MIM-type structures completed by Pt discreet top electrode patterning. By studying I–U sweeps, memristors with self-rectifying and volatile behaviour were identified. Moreover, all the analysed memristors demonstrated multilevel properties. The best-performing memristors showed HRS/LRS (high resistive state/low resistive state) ratios between 4 and 6 × 105 and very good retention up to 106 successive readings. The anodic memristors grown along the compositional spread showed very good endurance up to 106 switching cycles, excluding those grown from alloys containing between 31 and 39 at.% Ti, which withstood only 10 switching cycles. Taking into consideration all the parameters studied, the Nb-46 at.% Ti composition was screened as the parent metal alloy composition, leading to the best-performing anodic memristor in this alloy system. The results obtained suggest that memristive behaviour is based on an interfacial non-filamentary type of resistive switching, which is consistent with the performed cross-sectional TEM structural and chemical characterisation.

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