Ferroelectric ceramics by sol–gel methods and applications: a review

Chilibon, Irinela; Marat-Mendes, J.N.

doi:10.1007/s10971-012-2891-7

Cited by 74 publications

(29 citation statements)

References 114 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One of the main current challenges in nanosciences and nanotechnology is the development of new functional materials and associated nanofabrication processes able to provide high resolution and advanced functionalities. Among other functional materials, metal oxides are of highest interest for a wide range of applications like optics, photonics, 1,2 microelectronics, 3 magnetism, 4 photocatalysis, and photovoltaics. 5 However, their integration into complex systems or devices usually requires multistep processes, involving vacuum deposition or high temperature processes.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature preparation of metal-oxide nanostructures by DUV lithography from metal-oxo clusters

et al. 2014

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Room-temperature preparation of metal-oxide nanostructures by DUV lithography from metal-oxo clusters

et al. 2014

View full text Add to dashboard Cite

“…A variety of approaches including sol-gel, chelate, and metalloorganic decomposition have been employed with success in the fabrication of perovskite materials [ 103 , 104 , 105 , 106 ]. Nowadays, some methods have been engaged in ferroelectric thin film synthesis, generally including the widely used chemical solution deposition (CSD) [ 107 , 108 ], chemical vapor deposition (CVD) [ 109 ], hydrothermal-electrochemical method [ 110 ] and advanced atomic layer deposition [ 111 ].…”

Section: Growth Of Ferroelectric Thin Filmsmentioning

confidence: 99%

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

et al. 2014

View full text Add to dashboard Cite

Ultrathin ferroelectric films are of increasing interests these years, owing to the need of device miniaturization and their wide spectrum of appealing properties. Recent advanced deposition methods and characterization techniques have largely broadened the scope of experimental researches of ultrathin ferroelectric films, pushing intensive property study and promising device applications. This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties, as well as device applications. The strongest emphasis is on those aspects intimately related to the unique phenomena and physics of ultrathin ferroelectric films. Prospects and challenges of this field also have been highlighted.

show abstract

“…BaTiO 3 (BTO), the reported values for the dielectric constant span an interval of at least one order of magnitude, from about 100 to more than 1000, generating difficulties in developing theoretical models involving this quantity 5–7 . Therefore, it is fair to consider that the static dielectric constant in ferroelectric materials is very much sample dependent, being affected by extrinsic contributions coming from various structural defects that may act as trapping centers for electric charges that may be able to respond to the small amplitude ac signal used for standard capacitance measurements 8 . It immediately follows that, if one intends to get closer to the intrinsic value of the dielectric constant in ferroelectrics, it has to prepare single crystal or epitaxial samples with reduced density of structural defects 9 .…”

Section: Introductionmentioning

confidence: 99%

Low value for the static background dielectric constant in epitaxial PZT thin films

Boni

Chirilă

Hrib

et al. 2019

Sci Rep

View full text Add to dashboard Cite

Ferroelectrics are intensively studied materials due to their unique properties with high potential for applications. Despite all efforts devoted to obtain the values of ferroelectric material constants, the problem of the magnitude of static dielectric constant remains unsolved. In this article it is shown that the value of the static dielectric constant at zero electric field and with negligible contribution from the ferroelectric polarization (also called static background dielectric constant, or just background dielectric constant) can be very low (between 10 and 15), possibly converging towards the value in the optical domain. It is also found that the natural state of an ideal, mono-domain, epitaxial ferroelectric is that of full depletion with constant capacitance at voltages outside the switching domain. The findings are based on experimental results obtained from a new custom method designed to measure the capacitance-voltage characteristic in static conditions, as well from Rayleigh analysis. These results have important implications in future analysis of conduction mechanisms in ferroelectrics and theoretical modeling of ferroelectric-based devices.

show abstract

Ferroelectric ceramics by sol–gel methods and applications: a review

Cited by 74 publications

References 114 publications

Room-temperature preparation of metal-oxide nanostructures by DUV lithography from metal-oxo clusters

Room-temperature preparation of metal-oxide nanostructures by DUV lithography from metal-oxo clusters

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

Low value for the static background dielectric constant in epitaxial PZT thin films

Contact Info

Product

Resources

About