Ferroelectric and Piezoelectric Properties of Disk Shape Lead Zirconate Titanate Thick Films

Iijima, Takashi; Matsuda, Hirofumi; Dugnani, Robert; Chang, Fu Kuo

doi:10.2320/matertrans.45.233

Cited by 12 publications

(10 citation statements)

References 15 publications

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“…A 100‐nm‐thick Pt top electrode layer was sputter deposited on the prepared PZT thick films, and the Pt layer and PZT layer were etched by a reactive ion etching (RIE, Plasmalab‐80plus, Oxford Instrument, Witney, UK) process to fabricate 20‐ to 100‐μm‐diameter PZT thick film disks. The details of this etching process have been described elsewhere 11 . The crystal structure and orientation behavior of the thin films were investigated with an X‐ray diffractometer (XRD, X'pert Pro, PANalytical, Almelo, The Netherlands).…”

Section: Methodsmentioning

confidence: 99%

“…The details of this etching process have been described elsewhere. 11 The crystal structure and orientation behavior of the thin films were investigated with an X-ray diffractometer (XRD, X'pert Pro, PANalytical, Almelo, The Netherlands). The microstructure of the films was observed with a scanning electron microscope (SEM, S-5000, Hitachi, Tokyo, Japan).…”

Section: Methodsmentioning

confidence: 99%

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Synthesis of 10‐μm‐Thick Lead Zirconate Titanate Films on 2‐in. Si Substrates for Piezoelectric Film Devices

Iijima

Osone

Shimojo

et al. 2006

Int J Applied Ceramic Tech

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To achieve micro‐machined piezoelectric film devices, crack‐free and dense 10‐μm‐thick lead zirconate titanate (PZT) films were successfully deposited onto 2‐in. Pt/Ti/SiO2/Si substrates using an automatic coating system, and disk‐shaped structures with a diameter from 20 to 100 μm were fabricated by an RIE process. The prepared PZT thick film disks showed well‐saturated P–E hysteresis curves and butterfly‐shaped longitudinal displacement curves. The AFM‐measured piezoelectric constant of the 30‐μm‐diameter PZT thick film disk after poling at 100 V for 10 min was AFM d33=290 pm/V. The resonant and anti‐resonant frequencies of the thickness oscillation mode were observed at 180 MHz. The calculated thickness mode effective coupling factor was (keff)2=0.1 for the poled 30‐μm‐diameter PZT thick film disks. These results suggest that the prepared PZT thick film disks are applicable for piezoelectric micro devices such as micro‐machined ultrasonic transducers.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Synthesis of 10‐μm‐Thick Lead Zirconate Titanate Films on 2‐in. Si Substrates for Piezoelectric Film Devices

Iijima

Osone

Shimojo

et al. 2006

Int J Applied Ceramic Tech

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“…The detail of this etching process was described elsewhere [10]. Finally, 20 to 80-µm-diameter PZT thick film disks were fabricated on the same Si wafer.…”

Section: Methodsmentioning

confidence: 99%

Effect of Diameter on Longitudinal Displacement in Disk Shape 10-μm-thick Lead Zirconate Titanate Films

et al. 2005

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Micro-machined piezoelectric film devices are usually fabricated onto substrates, so that the displacement response of the film is clamped with the substrate. To investigate the longitudinal displacement behavior of 10-µm-thick lead zirconate titanate (PZT) films deposited onto Si substrates, disk shape structures with diameters of 20 to 80-µm were fabricated by a reactive ion etching (RIE) process. The polarization-field (P-E) hysteresis curves did not show a remarkable difference with decreasing the PZT disk diameter. On the other hand, unipolar driven longitudinal displacement increased, and the amount of the displacement was saturated at a diameter of 30 and 20 µm. The AFM measured longitudinal piezoelectric constants, AFM d 33 , were estimated in the case of before poling and after poling at 100V for 10 min. The AFM d 33 for the before and after poling process were 65 and 94 pm/V for 80-µm-diameter film disk, and 153 and 315 pm/V for 20-µm-diameter film disk, respectively. The value of poled AFM d 33 for 20-µm-diameter film disk was comparable to bulk PZT ceramics. These results suggest that the decrease of the disk diameter reduces the Si substrate bending related with the clamping effect between the film and substrate, and facilitates domain reorientation in the poling process. It seems that the actual piezoelectric constant of films can be estimated from the longitudinal displacement when the ratio of the PZT disk diameter, d, to the PZT film thickness, t, shows d/t < 3 for 10-µm-thick PZT films.Mater. Res. Soc. Symp. Proc. Vol. 902E

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“…It has been reported that the conductivity of the material is less and the hysteresis loop of the material shows a saturation polarization of 3.5μC/cm 2 [9]. Both PbTiO3 and PZT are associated with lead vacancies due to evaporation of Pb during the processing, which leads to the increase in acceptor levels in the crystal, therefore, the conductivity problem and dielectric loss of BFO can be reduced significantly by substituting different elements (Pb, Ti, Zr) of PZT into A/B-sites of BFO in suitable proportions [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Effect of Multiple Substitutions (Pb, Ti, Zr) on Structural, Permittivity and Electrical Properties of BiFeO3 Ceramics

Pattanayak¹,

Panda²,

Choudhary

et al. 2017

JAP

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Three complex polycrystalline samples of Bi1-xPbxFe1-x Zrx-yTiyO3,with the combination of (i) x, y = 0.0 (BFO), (ii) x = 0.5 and y = 0.5 (BFPTO)and (iii) x = 0.5 and y = 0.25 (BFPZTO) were prepared by a standard mixed oxide (solid state reaction route) method at optimized calcinations (900oC) and sintering (930-950oC)temperatures. The effect of multiple (Pb, Ti and/or Zr) substitutions of different amount onthe permittivity, impedance and modulus characteristics of the materials has been investigated at different frequencies and temperature.Limitation associated with BiFeO3 (BFO) due to its semiconducting behavior acts as constraint in polling the material at room temperature leading to large dielectric loss. Attempts were made to minimizethe loss by substitution of Pb on the Bi site and Ti and/or Zr at the Fe site of BFO. The study indicates that the phase transition temperature of BFO is lowered,the degree of diffuse phase transition is enhanced and electrical parameters (dielectric constant, electrical resistivity, remnant polarization and maximum polarization) areincreased with a significant reduction in dielectric loss as a consequence of the substitution. Detailed studies of Nyquist plots with impedance and electric modulus data suggest that the existence of non-Debye type of relaxation phenomena in the materials. The ac conductivity study reveals that the conduction mechanism in the material obeys universal Jonscherâ€™s power law.

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Ferroelectric and Piezoelectric Properties of Disk Shape Lead Zirconate Titanate Thick Films

Cited by 12 publications

References 15 publications

Synthesis of 10‐μm‐Thick Lead Zirconate Titanate Films on 2‐in. Si Substrates for Piezoelectric Film Devices

Synthesis of 10‐μm‐Thick Lead Zirconate Titanate Films on 2‐in. Si Substrates for Piezoelectric Film Devices

Effect of Diameter on Longitudinal Displacement in Disk Shape 10-μm-thick Lead Zirconate Titanate Films

Effect of Multiple Substitutions (Pb, Ti, Zr) on Structural, Permittivity and Electrical Properties of BiFeO3 Ceramics

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