Ferroelectric Analog Synaptic Transistors

Abstract

Neuromorphic computing is a promising alternative to conventional computing systems as it could enable parallel computation and adaptive learning process. However, the development of energy efficient neuromorphic hardware systems has been hindered by the limited performance of analog synaptic devices. Here, we demonstrate the analog conductance modulation behavior in the ferroelectric thin-film transistors (FeTFT) that have the nanoscale ferroelectric material and oxide semiconductors. Accurate control of polarization changes in the nanoscale ferroelectric layer induces conductance modulation to demonstrate linear potentiation and depression characteristics of FeTFTs. Our devices show potentiation and depression properties, including high linearity, multiple states, and small cycle-to-cycle/device-to-device variations. In simulations with measured properties, a neuromorphic system with FeTFT achieves 91.1% recognition accuracy of handwritten digits. This work may provide a way to realize the neuromorphic hardware systems that use FeTFTs as the synaptic devices.

Synergistic Improvement of Long‐Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia‐Based Oxide‐Semiconductor Transistors

“…By applying the positive bias pulse to the gate electrode, the polarization state can be switched from downward to upward. [13,55] As the amplitude of positive bias pulse increased, the polarization state of the ferroelectric layer was changed sequentially from downward to upward states. Therefore, to induce partially polarized states, such as interstate1 and interstate2, positive pulses with different amplitudes of 2 and 3.5 V were applied, respectively.…”

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Recently, many types of neuromorphic devices have been proposed to emulate the highly efficient operations of a brain. [5][6][7][8][9][10][11][12][13][14][15][16][17] Particularly, photonic synapse devices have received attention because they have several advantages compared to the electronic synapse devices, such as wide bandwidth, low crosstalk, and low power consumption characteristics. [18][19][20][21][22][23][24][25][26][27][28] Therefore, researchers have attempted to mimic synaptic behaviors by utilizing optical stimulation and photonic synapse devices have been realized with various materials such as carbon nanotubes, [29,30] oxide semiconductors, [18,19,25,31,32] perovskite quantum dots, [21,33] 2D materials, [23,24,27,28,34,35] and hybrid perovskites.

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Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films

“…Furthermore, the remanence and electric field control of the polarization makes ferroelectric materials ideal candidates for non-volatile memories and inmemory computing. [9] Specifically, HfO2-based ferroelectric structures on silicon [10] or transparent conducting oxides [11] show excellent memristive behaviors and low-voltage operation thanks to its high-dielectric constant. Layers of doped-Hafnium have been extensively studied since 2011, when a ferroelectric phase of this common dielectric material was first discovered [12] in films synthesized by Atomic layer Deposition (ALD).…”

“…symmetry direction parallel to the[11][12][13][14][15][16][17][18][19][20] axis of GaN. Finally, off-axis measurements were carried on to measure the d-spacing along the (200), the (311) and the (042) directions.…”

Controlled Ionic Tunneling in Lithium Nanoionic Synaptic Transistor through Atomically Thin Graphene Layer for Neuromorphic Computing

“…[3,4] Developing a highspeed and a low-cost artificial synapse device to build an artificial neural network to simulate the human brain like functionalities is the dominant scientific goal of the twenty-first century. [6,7] Besides, a different type of two-terminal memristor such as oxidebased resistive random-access memory (RRAM), [8] ferroelectric memory, [9][10][11][12] and phase-change memory (PCM) [13][14][15] has been employed to mimic the synaptic activity due to reversible analog switching. The conventional neural prototype chip was fabricated based on traditional complementary metal-oxide-semiconductor (CMOS) circuits.…”