Ferro‐floating memory: Dual‐mode ferroelectric floating memory and its application to in‐memory computing

Park, Sang Yong; Oh, Seyong; Lee, Dongyoung; Park, Jin‐Hong

doi:10.1002/inf2.12367

Cited by 5 publications

(1 citation statement)

References 63 publications

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“…As the gate electrode is not present on the ferroelectric layer, the total height of the device structure is significantly reduced. Prior studies have employed α-In 2 Se 3 as a ferroelectric layer that is polarized by the out-of-plane (OOP) directional electric field 41 – 43 . Only a limited number of studies have explored the interlocking effect to alter the resistance of memristor-type devices 35 , 44 – 50 .…”

Section: Introductionmentioning

confidence: 99%

Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array

Park,

Lee,

Kang

et al. 2023

Nat Commun

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In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfer. Nevertheless, it necessitates a high-density memory array to effectively manage large data volumes. Here, we present a stacked ferroelectric memory array comprised of laterally gated ferroelectric field-effect transistors (LG-FeFETs). The interlocking effect of the α-In2Se3 is utilized to regulate the channel conductance. Our study examined the distinctive characteristics of the LG-FeFET, such as a notably wide memory window, effective ferroelectric switching, long retention time (over 3 × 104 seconds), and high endurance (over 105 cycles). This device is also well-suited for implementing vertically stacked structures because decreasing its height can help mitigate the challenges associated with the integration process. We devised a 3D stacked structure using the LG-FeFET and verified its feasibility by performing multiply-accumulate (MAC) operations in a two-tier stacked memory configuration.

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Section: Introductionmentioning

confidence: 99%

Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array

Park,

Lee,

Kang

et al. 2023

Nat Commun

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Highly Enhanced Polarization Switching Speed in HfO₂‐based Ferroelectric Thin Films via a Composition Gradient Strategy

Hao

Zheng

Zeng

et al. 2023

Adv Funct Materials

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The next-generation semiconductor memories are essentially required for the advancements in modern electronic devices. Ferroelectric memories by HfO 2 -based ferroelectric thin films (FE-HfO 2 ) have opened promising directions in recent years. Nevertheless, improving the polarization switching speed of FE-HfO 2 remains a critical task. In this study, it is demonstrated that the composition-graded Hf 1-x Zr x O 2 (HZO) ferroelectric thin film has more than two times faster polarization switching speed than the conventional composition-uniform one. Meanwhile, it has excellent ferroelectricity and improved endurance characteristics. It is also discovered that when the HZO thin film has a gradient composition, the polarization-switching dynamics shifts from the nucleation-limited-switching mechanism to the domainwall growth mechanism. Moreover, the transition of switching dynamics is responsible for the faster speed and better endurance of the compositiongraded HZO thin film. These findings not only reveal the physical mechanisms of this material system but also provide a new strategy for memory devices having faster speed and higher endurance.

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Reconfigurable Sensing‐Memory‐Processing and Logical Integration Within 2D Ferroelectric Optoelectronic Transistor for CMOS‐Compatible Bionic Vision

Wang,

Zhou,

Cui

et al. 2024

Adv Funct Materials

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Neuromorphic ferroelectric transistors integrating sensing and memory capabilities for photoelectric stimuli have provided a remarkable platform for multifunctional bionic vision. However, most hardware demonstrations utilizing ferroelectric transistors cannot implement multiple bio‐visual functions simultaneously under a small operating voltage with scalable material systems, which reduces the compatibility with complementary metal‐oxide‐semiconductor (CMOS) technology and blocks further bio‐visual applications. Herein, an optoelectronic transistor gated is constructed with ferroelectric LiNbO3, which exhibits sensing‐memory‐processing functions and logic integration simultaneously under a low operating voltage (≈1.5 V). Benefiting from the programmable photoinduction and strong ferroelectric polarization, the reliable and highly controllable synaptic characteristics and the bio‐visual selective learning behavior are successfully demonstrated. A high recognition accuracy (≈94.5%) in simulations is also achieved due to the unique linear synaptic plasticity. Furthermore, based on dual‐wavelength modulation, the full‐optical logics “AND” and “OR” are established within the same device. This work provides novel opportunities for the complex multifunctional bionic vision and toward large‐scale integration compatible with silicon‐based CMOS processes.

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Ferro‐floating memory: Dual‐mode ferroelectric floating memory and its application to in‐memory computing

Cited by 5 publications

References 63 publications

Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array

Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array

Highly Enhanced Polarization Switching Speed in HfO₂‐based Ferroelectric Thin Films via a Composition Gradient Strategy

Reconfigurable Sensing‐Memory‐Processing and Logical Integration Within 2D Ferroelectric Optoelectronic Transistor for CMOS‐Compatible Bionic Vision

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Ferro‐floating memory: Dual‐mode ferroelectric floating memory and its application to in‐memory computing

Cited by 5 publications

References 63 publications

Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array

Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array

Highly Enhanced Polarization Switching Speed in HfO2‐based Ferroelectric Thin Films via a Composition Gradient Strategy

Reconfigurable Sensing‐Memory‐Processing and Logical Integration Within 2D Ferroelectric Optoelectronic Transistor for CMOS‐Compatible Bionic Vision

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Highly Enhanced Polarization Switching Speed in HfO₂‐based Ferroelectric Thin Films via a Composition Gradient Strategy