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2001
DOI: 10.1103/physrevlett.86.4895
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Fermi-Liquid Behavior of the Low-Density 2D Hole Gas in aGaAs/AlGaAsHeterostructure at Large Values ofrs

Abstract: We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from 'metallic'-to-'insulating' behaviour of ρ(T ). It has been established that, at rs as large as 29, negative magnetoresistance does exist and is well described by weak localisation. The dephasing time extracted from the magnetoresistance is dominated by the T 2 -term due to Landau scattering in the clean limit. The effect of hole-hole interactions, however, is suppressed when compared with the theory for smal… Show more

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Cited by 36 publications
(33 citation statements)
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“…The concentration n c corresponding to a change in the sign of the derivative dR/dT , varied widely from sam- ple to sample, depending on the disorder in the electron system under investigation. A similar change in the sign of the derivative dR/dT , corresponding to the critical carrier concentration n c (p c ), was subsequently found in AlGaAs/GaAs heterostructures with two-dimensional electron 71,72 and hole 73,74,75,76,77,78,79,80 gas, quantum wells AlAs with two-dimensional electron gas 81 , as well as quantum SiGe wells with electron 82 and hole 83,84 gas. However, the temperature dependence of the resistance of these low-dimensional systems in the temperature range T < 1K turned out to be much less than that in silicon MOS structures (Fig.…”
Section: Metal-insulator Transition In Two-dimensional Systemsmentioning
confidence: 76%
“…The concentration n c corresponding to a change in the sign of the derivative dR/dT , varied widely from sam- ple to sample, depending on the disorder in the electron system under investigation. A similar change in the sign of the derivative dR/dT , corresponding to the critical carrier concentration n c (p c ), was subsequently found in AlGaAs/GaAs heterostructures with two-dimensional electron 71,72 and hole 73,74,75,76,77,78,79,80 gas, quantum wells AlAs with two-dimensional electron gas 81 , as well as quantum SiGe wells with electron 82 and hole 83,84 gas. However, the temperature dependence of the resistance of these low-dimensional systems in the temperature range T < 1K turned out to be much less than that in silicon MOS structures (Fig.…”
Section: Metal-insulator Transition In Two-dimensional Systemsmentioning
confidence: 76%
“…[17]. In measurements of the weak localization [60] and quantum oscillations in a weak perpendicular field [2], a Fermi-liquid type behavior was found with no signatures of the spin polarization of itinerant electrons.…”
Section: Experimental Situationmentioning
confidence: 99%
“…[17]. In measurements of the weak localization [60] and quantum oscillations in a weak perpendicular field [2], a Fermi-liquid type behavior was found with no signatures of the spin polarization of itinerant electrons.Eventually, the thermodynamic spin magnetization measurements performed in a weak field [61] have clarified the reason of the contradiction: the 2D interacting electron system experiences a transition from Fermi liquid to the two-phase state, that hampered interpretation of the data. The main result of the thermodynamic weak field studies is the observation of "spin-droplets" -spin-polarized collective electron states with a total spin of the order of two [61].…”
mentioning
confidence: 99%
“…(The existence of the percolative MIT in 2D GaAs structures was proposed earlier in [11].) In this work we use combined compressibility and conductance measurements to shed light on the origin of the apparent MIT in 2D hole gases with large interactions between the carriers -a problem widely debated over the last few years [16,17,18]. We compare the behaviour of the compressibility of holes with that of electrons (with much weaker interactions) and conclude that the apparent MIT in 2D hole gases is not related to a quantum phase transition.…”
mentioning
confidence: 99%