Fermi level unpinning achievement and transport modification in Hf1-Yb O /Al2O3/GaSb laminated stacks by doping engineering

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al2O3 Interlayers

“…The lower curve-shifting efficiency for the pure phase and ALD 10c samples may be influenced by the weak Fermi energy-level pinning, while a small number of carriers may be involved in the response. Based on the Shockley–Read–Hall theory, the locations of the energy change, the test frequency, and the interface state density have a relatively definite relationship normalΔ E = ( E C − E T ) = k normalB T q 0.25em ln ( σ v D dos 2 π f ) where E T is the interface trap energy level, E C is the majority carrier conduction band edge, k B is the Boltzmann constant, T is the temperature, and f is the frequency. σ is the trap interface area, v is the carrier thermal rate, D dos is the major carrier energy band density of states, and InP corresponds to values of 8.50 × 10 –17 cm 2 , 4.16 × 10 7 cm/s, and 5.56 × 10 23 cm –3 …”

“…Coming to the substrate injection, ε ox values are 10.58, 10.19, 37.86, and 32.90, corresponding to the pure phase, ALD 10c, ALD 20c, and ALD 30c, respectively, indicating that PF emission dominates all samples in the low-medium electric field region (0.42 < E < 1.68 MV/cm). Further, the fitted line with the intercept = ln nobreak0em.25em⁡ B − q φ normalt k normalB T can be used to determine the trap energy level, and φ t is larger than gate injection at substrate injection, indicating that the probability of electrons jumping out of the trap energy level into the conduction band is reduced at substrate injection …”

“…The lower curve-shifting efficiency for the pure phase and ALD 10c samples may be influenced by the weak Fermi energy-level pinning, while a small number of carriers may be involved in the response. Based on the Shockley−Read−Hall theory, the locations of the energy change, the test frequency, and the interface state density have a relatively definite relationship 48 i k j j j j j y…”

“…can be used to determine the trap energy level, and φ t is larger than gate injection at substrate injection, indicating that the probability of electrons jumping out of the trap energy level into the conduction band is reduced at substrate injection. 48 FN tunneling is also one of the electrode-limited conduction mechanisms. When the applied electric field is very high and the barrier height reaches a sufficiently small level (below 100 Å), electrons will penetrate the barrier into the conduction band of the gate dielectric, forming the FN tunneling effect.…”