Fermi gas energetics in low-dimensional metals of special geometry

Tavkhelidze, A.; Svanidze, Vasiko; Noselidze, Irakli

doi:10.1116/1.2753852

Cited by 9 publications

(12 citation statements)

References 7 publications

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“…16. ͑13͒ shows that in some cases e ϫ can be reduced to zero and even acquire negative values, hypothetically.…”

Section: Wf Of Metal Rqw Grown On Msmentioning

confidence: 99%

“…Previously, quantum state depression was studied theoretically 16 and experimentally 17 in ridged metal films. The RQW retains quantum properties at G times more width with respect to the conventional quantum well.…”

Section: ͑3͒mentioning

confidence: 99%

“…The RQW retains quantum properties at G times more width with respect to the conventional quantum well. Previously, quantum state depression was studied theoretically 16 and experimentally 17 in ridged metal films.…”

Section: Inroduction Low Work Function (Wf) Electrodesmentioning

confidence: 99%

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Nanostructured electrodes for thermionic and thermotunnel devices

Tavkhelidze

2010

Journal of Applied Physics

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Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices Recently, distinctive quantum features have been studied in the area of ridged quantum wells ͑RQWs͒. Periodic ridges on the surface of the quantum well layer impose additional boundary conditions on the electron wave function and reduce the quantum state density. Electrons, rejected from forbidden quantum states, have to occupy the states with higher energy. As a result, Fermi energy in RQW increases and work function ͑WF͒ decreases. We investigate low WF electrode, composed from a metal RQW layer and a base substrate. The substrate material was selected so that electrons were confined to the RQW. The WF value depends on ridge geometry and electron confinement. We calculate WF in the metal RQW films grown both on a semiconductor and metal substrates. In the case of semiconductor substrate, wide band gap materials are preferable as they allow more reduction in RQW WF. In the case of metal substrate, low Fermi energy materials are preferable. For most material pairs, the WF was reduced dramatically. Such structures, can serve as electrodes for room temperature thermionic and thermotunnel energy converters and coolers.

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“…16. ͑13͒ shows that in some cases e ϫ can be reduced to zero and even acquire negative values, hypothetically.…”

Section: Wf Of Metal Rqw Grown On Msmentioning

confidence: 99%

Section: ͑3͒mentioning

confidence: 99%

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Nanostructured electrodes for thermionic and thermotunnel devices

Tavkhelidze

2010

Journal of Applied Physics

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“…In addition, the metal RQW was investigated in an earlier study. 2 Let us now find the distinctive features of the semiconductor RQW. Like in metals, the QSD also forbids some quantum states.…”

Section: Semiconductor Rqwmentioning

confidence: 99%

“…The result obtained was the reduction of ρ(k) and the increase of E F in RQW (detailed description can be found in Ref. 2). Analysis was made within the limit of the quantum model of free electrons.…”

Section: Semiconductor Rqwmentioning

confidence: 99%

Quantum State Depression in a Semiconductor Quantum Well

Tavkhelidze

Svanidze

2008

Int. J. Nanosci.

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In this study, the quantum state depression (QSD) in semiconductor quantum well (QW) is investigated. The QSD emerge from the ridged geometry of the QW boundary. Ridges impose additional boundary conditions on the electron wave function and some quantum states become forbidden. State density reduces in all energy bands, including conduction band (CB). Hence, electrons, rejected from the filled bands, must occupy quantum states in the empty bands due to Pauli Exclusion principle. Both the electron concentration in CB and Fermi energy increases as in the case of donor doping. Since quantum state density is reduced, the ridged quantum well (RQW) exhibits quantum properties at widths approaching 200 nm. Wide RQW can be used to improve photon confinement in QW-based optoelectronics devices. Reduction in the state density increases the carrier mobility and makes the ballistic transport regime more pronounced in the semiconductor QW devices. Furthermore, the QSD doping does not introduce scattering centers and can be used for power electronics.

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