Abstract:Ultrafast pump probe reflectivity (PPR) signal near band edge is modeled by taking into account band filling (BF) and band gap renormalization (BGR) effects with the carrier density of ~1017/cm3 in GaAs crystal at room temperature. The calculated results indicate that the transient reflectivity ΔR/R is determined by BF and BGR effects. The most interesting feature is that ΔR/R signal experiences a sign change from photo-bleaching (PB) to photo-absorption (PA) due to the competition between BF and BGR effects. … Show more
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