Femtosecond pulsed laser induced growth of highly transparent indium-tin-oxide thin films: Effect of deposition temperature and oxygen partial pressure

Fabrication and electrical properties of a (Pb,La)(Zr,Ti)O3capacitor with pulsed laser deposited Sn-doped In2O3bottom electrode on Al2O3(0001)

“…As reported by Coutal et al, the diffraction peaks of few ITO thin films do not exhibit a single In 2 O 3 crystalline structure 27). ITO peaks depend on Sn contents in the ITO films and other deposition parameters [28][29][30]. ITO (222) and (400) peaks can be clearly observed in the data shown in Fig.1(a).…”

“…27) ITO peaks depend on Sn contents in the ITO films and other deposition parameters. [28][29][30] ITO ( 222) and (400) peaks can be clearly observed in the data shown in Fig. 1(a).…”

Recent Development of Carbon Nanotube Transparent Conductive Films

“…Efforts have been made to overcome the inherit brittleness by laminating ITO onto a flexible polyethylene terephthalate (PET) substrate or controlling the ratio of indium and tin, but both of these approaches result in additional production costs and/or poorer optoelectronic properties . (3) Limited lifetime: under certain circumstances, performance degradation has been observed as a direct result of the diffusion of indium into the active layer of OLEDs and photovoltaics and corrosion of ITO itself by exposure to small amounts of adhesives and acids in the environment. − (4) High production costs: various approaches have been used to fabricate ITO films, including screen printing, molecular beam epitaxy, magnetron sputtering, sol–gel techniques, and pulsed laser deposition, but most of these methods either require significant energy consumption due to high-temperature conditions or involve waste of the raw materials through inefficient deposition . Alternative doped TCOs, such as fluorine-doped tin oxides (FTOs), also suffer from problems similar to ITO.…”

Ultra-Short Pulsed Laser Deposition of Oxides, Borides and Carbides of Transition Elements

“…In 2015, Eisa et al used a Ti:sapphire laser (λ = 800 nm, τ = 40 fs, repetition rate = 1 kHz, power = 700 mW) to deposit ITO films both in vacuum and in oxygen pressure [77]. The XRD data confirmed that the crystallinity of the films deposited in vacuum increased with increasing substrate temperature, while the presence of an oxygen pressure (1 and 10 torr) also improved the film crystallinity.…”