Taking the influences of piezoelectricity and spontaneous polarization into consideration, the nonlinear optical Kerr effect in a nitride semiconductor coupling double quantum well (DQW) has been theoretically investigated by using the compact density matrix approach and iterative treatment. The electronic eigenstates in a nitride DQW are exactly solved based on the built-in electric field model already constituted in recent reference. The band non-parabolicity effect of nitride heterostructures has been taken into account. A typical wurtzite GaN/AlGaN DQW is chosen to perform numerical calculations. The calculated results reveal that the optical Kerr coefficients sensitively depend on the structural parameters of the coupling DQW system. Moreover, a strong optical Kerr effect can be realized in the nitride DQW by choosing a group of optimum structural parameters and doped fraction.Keywords: Optical Kerr effect; Wurtzite double quantum wells; effects of piezoelectricity and spontaneous polarization; density matrix approach.PACS Number(s): 78.66.Fd, 78.67.De, 78.20.Fm