2020
DOI: 10.1039/c9na00740g
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Femtosecond laser-induced non-thermal welding for a single Cu nanowire glucose sensor

Abstract: Experiments and simulations of FS laser induced nonthermal welding for single Cu nanowires on a flexible substrate.

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Cited by 26 publications
(12 citation statements)
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“… The main physical conclusion at the nanoscale is that we observed a dominant ballistic phenomenon, while for values higher than 500 nm, the two mechanisms (ballistic and thermal) compete. The shorter the target and irradiation time, the higher the presence of ballistic phenomena [ 17 ]. Compared to fs-scale irradiation, where the two phenomena are present at 100 nm [ 18 ], the same behavior within the range of 500–1000 nm can be observed.…”
Section: Discussionmentioning
confidence: 99%
“… The main physical conclusion at the nanoscale is that we observed a dominant ballistic phenomenon, while for values higher than 500 nm, the two mechanisms (ballistic and thermal) compete. The shorter the target and irradiation time, the higher the presence of ballistic phenomena [ 17 ]. Compared to fs-scale irradiation, where the two phenomena are present at 100 nm [ 18 ], the same behavior within the range of 500–1000 nm can be observed.…”
Section: Discussionmentioning
confidence: 99%
“…Copper (Cu) is also a popular catalytic material for glucose detection because of its low cost, nontoxicity, and high electrochemical activity. Identical to Ni-based materials, Cu-based materials, such as Cu, (39)(40)(41)(42)(43)(44)(45) CuO, (46)(47)(48)(49)(50) Cu 2 O, (51)(52)(53)(54) Cu(OH) 2 , (55) CuS, (56,57) and others, can be used for the electrocatalysis of glucose. Cu-based materials participate in the oxidation of glucose oxidation in various forms, such as nanocubes, nanorods, nanowires, nanosheets, and nanoflowers.…”
Section: Enzyme-free Glucose Sensors Based On Cumentioning
confidence: 99%
“…[ 25–29 ] Nanowire (NW) structure provides a larger area of solid‐liquid reaction interface, exhibiting natural advantages in PEC‐PDs. [ 30–36 ] As the cornerstone in the field of optoelectronics, nitride semiconductors demonstrate outstanding optoelectronic properties, wide bandgap and excellent chemical stability. Recently, corresponding applications in PEC devices by using GaN NWs, AlGaN NWs and InGaN NWs have been reported.…”
Section: Introductionmentioning
confidence: 99%