Femtosecond-laser-fabricated periodic tapered structures on a silicon substrate for terahertz antireflection

Xi, Yu; Ohta, Michiharu; Takizawa, Nobuhito; Mikame, Kazuhisa; Ono, Shingo; Bae, Jongsuck

doi:10.1364/ao.58.009595

Cited by 16 publications

(2 citation statements)

References 28 publications

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“…The proposed materials have sufficiently small imaginary parts. The chosen parameters are not unattainable, considering that the RI of silicon is about 3.42 at terahertz frequencies and the RI of silicon dioxide is about 2.12 at terahertz frequencies [27,28]. On the other hand, the structure we propose is not completely unattainable if the experimental implementation is considered.…”

Section: Simulation Model and Formulationmentioning

confidence: 99%

A functionality-switchable device based on coherent perfect absorption with narrowband absorbing performance and sensing function

Zhang¹,

Zhang²,

Zhang³

2023

Phys. Scr.

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An optical structure containing the ferrite defects and Fabry-Pérot cavity with a narrowband absorption feature and a sensing performance is proposed and modeled in theoretical scope. These two features appear alternately on adjacent frequency ranges with modulation of the coherent perfect absorption by altering the phase difference between the two coherent incident lights. For the absorption band, the relative bandwidth reaches 9.7%. Benefiting from the modulation of the magnetic field applied in the ferrite layers, the quality value of the absorption peak is 494.85, which indicates the potential for use as a sensor. There are highly linear relationships between the refractive index values of dielectric layers and the spike absorption frequencies. The accurate analysis of the RI from 2.7 to 3.4 can be realized. The sensitivity and the average detection limit are 1.287 THz/RIU and 7.46 × 10-4 RIU. The figure of merit is up to 83.03 RIU−1. Similarly, the structure is also competent to detect RI of another kind of dielectric layer from 2.2 to 2.85. The corresponding parameters are 1.241 THz/RIU, 7.12 × 10-4 RIU, and 77.53 RIU−1, respectively. Meanwhile, the effects of the incident angle and machining inaccuracies are also discussed.

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Section: Simulation Model and Formulationmentioning

confidence: 99%

A functionality-switchable device based on coherent perfect absorption with narrowband absorbing performance and sensing function

Zhang¹,

Zhang²,

Zhang³

2023

Phys. Scr.

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“…The emission of terahertz waves from ZnO-based devices is very strong evidence that ZnO also has potential uses for terahertz components [ 8 , 10 ]. In both the UV–visible and terahertz regions, laser processing is an efficient method for realizing thin-film-based devices or nano/microstructure-based functional surfaces [ 11 , 12 , 13 , 14 , 15 ]. ZnO-based thin films fabricated by pulsed laser deposition have been widely reported by a vast number of researchers [ 2 ]; in most of these reports, a UV laser with a nanosecond order pulse duration was used.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond Laser-Pulse-Induced Surface Cleavage of Zinc Oxide Substrate

Itoigawa

Ono

2021

Micromachines

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The induction of surface cleavage along the crystalline structure of a zinc oxide substrate (plane orientation: 0001) by femtosecond laser pulses (wavelength: 1030 nm) has been reported; a scanning electron microscope image of the one-pulse (pulse energy: 6–60 μJ) irradiated surface shows very clear marks from broken hexagons. This cleavage process differs from the general laser-induced melt process observed on the surfaces of narrower-bandgap semiconductors and other metal materials. This phenomenon is discussed using a multi-photon absorption model, and the pulse-energy dependence of the cleavage depth (less than 3 μm) is quantitatively analyzed. Laser-induced cleavage is found not to occur under multi-pulse irradiation; when more than four pulses are irradiated upon the same spot, the general laser-induced melt process becomes dominant. This cleavage–melt shift is considered to be caused by the enhancement of absorption due to the initial pulses, which is supported by our measurement of cathodoluminescence.

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Terahertz membrane sensing based on terahertz composite slabs with enhanced fields

Li²,

Feng³

et al. 2022

Appl. Phys. A

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Femtosecond-laser-fabricated periodic tapered structures on a silicon substrate for terahertz antireflection

Cited by 16 publications

References 28 publications

A functionality-switchable device based on coherent perfect absorption with narrowband absorbing performance and sensing function

A functionality-switchable device based on coherent perfect absorption with narrowband absorbing performance and sensing function

Femtosecond Laser-Pulse-Induced Surface Cleavage of Zinc Oxide Substrate

Terahertz membrane sensing based on terahertz composite slabs with enhanced fields

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