1994
DOI: 10.1063/1.112974
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Femtosecond laser excitation of the semiconductor-metal phase transition in VO2

Abstract: We have measured the subpicosecond optical response of a solid-state, semiconductor-to-metal phase transition excited by femtosecond laser pulses. We have determined the dynamic response of the complex refractive index of VO2 thin films by making pump-probe optical transmission and reflection measurements at 780 nm. The phase transition was found to be largely prompt with the optical properties of the high-temperature metallic state being attained within 5 ps. The ultrafast change in complex refractive index e… Show more

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Cited by 243 publications
(125 citation statements)
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“…The state of VO 2 immediately after photoexcitation is far from equilibrium, and the lattice potential is likely to continue to evolve to that of the R-phase during the thermalization process 30,31 . On these timescales, the evolution of the lattice and the electronic structure may not be concurrent, but may be accessible optically through the analysis of the broadband dielectric function 32,33 .…”
Section: Discussionmentioning
confidence: 99%
“…The state of VO 2 immediately after photoexcitation is far from equilibrium, and the lattice potential is likely to continue to evolve to that of the R-phase during the thermalization process 30,31 . On these timescales, the evolution of the lattice and the electronic structure may not be concurrent, but may be accessible optically through the analysis of the broadband dielectric function 32,33 .…”
Section: Discussionmentioning
confidence: 99%
“…This latter has been investigated comprehensively by Verleur et al and Barker et al (44). One should mention that recent femtosecond laser investigations have been carried out to study the dynamic response of the VO 2 refractive index as well to measure the structural transition duration which was found to occur within Ϸ500 fs (45)(46). Such an ultrafast change in complex refractive index with temperature should enable ultra-fast optical switching devices based on VO 2 (47).…”
Section: Elocal Eincidentmentioning
confidence: 99%
“…[5][6][7][8] In addition, this material has attracted much attention for its potential applications in ultrafast optical and electrical switching. [9][10][11][12][13] Therefore, much effort has been made to modulate the MIT by various approaches such as strain engineering, 14,15 ionic liquid gating, [16][17][18] electric field-induced oxygen vacancy, 19 and chemical doping. [20][21][22][23][24][25] In terms of chemical doping, using metal elements such as tungsten during growth can dramatically change the transition properties 20,26 , but it is an irreversible process.…”
mentioning
confidence: 99%