Femtosecond laser ablation of diamond-like carbon films

Dumitru, G.; Romano, Valerio; Weber, H. P.; Pimenov, S.M.; Kononenko, T. V.; Sentís, M.; Hermann, J.; Bruneau, S.

doi:10.1016/j.apsusc.2003.08.031

Cited by 61 publications

(37 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It should be noted that glass-like materials are usually formed [19] at the laser irradiation with pulses of 10 −7 s duration and 10 MW/cm 2 intensity. As a whole, the interpretation of ellipsometric data is in a good agreement with the model of laser-induced graphitization [20] and structural changes [21] of DLC films under laser irradiation.…”

Section: Spectroscopic Ellipsometrysupporting

confidence: 66%

Modification of amorphous a-C:H films by laser irradiation

Grigonis¹

2007

Lithuanian J. Phys.

View full text Add to dashboard Cite

Amorphous diamond-like hydrogenated carbon films a-C:H were formed on Si wafers by a direct ion beam deposition method from acetylene or a gas mixture of acetylene and hydrogen. The samples were irradiated in a scanning mode by second harmonic (wavelength λ = 532 nm) of a Q-switched YAG : Nd laser. The effect of laser irradiation was studied by Raman and infrared spectroscopy and spectroscopic ellipsometry. The changes in the optical spectra of the samples with different H amount were investigated in the dependence on laser intensity. Experimental data were interpreted taking into account the structural transformations of a-C:H films.

show abstract

Section: Spectroscopic Ellipsometrysupporting

confidence: 66%

Modification of amorphous a-C:H films by laser irradiation

Grigonis¹

2007

Lithuanian J. Phys.

View full text Add to dashboard Cite

show abstract

“…The threshold fluences above these thicknesses are around 0.120 J cm −2 and 0.065 J cm −2 , respectively. The bulk threshold value of the ta-C film compares well with the value of 0.1-0.2 J cm −2 observed by a 40-150 fs laser treatment on bulk a-C:H films produced by unbalanced magnetron sputtering [35] and hot filament diode discharge [36].…”

Section: Resultssupporting

confidence: 58%

Femtosecond laser interaction with pulsed-laser deposited carbon thin films of nanoscale thickness

et al. 2010

View full text Add to dashboard Cite

The dependence of optical, electronic and thermal penetration zones on the thickness of nanoscale layers grown on silicon wafers is reported. Tetrahedral amorphous carbon (ta-C) and amorphous carbon nitride (a-C x N y ) films were prepared by inverse pulsed laser deposition (IPLD). Single-pulse modification thresholds for femtosecond laser processing proved to be dependent on the actual film thickness below 60 nm for ta-C and 90 nm for a-C x N y . The modification behaviour was governed by multiphoton processes. An effective penetration depth of the laser radiation in a-C x N y was of ca. 110 nm in accordance with two-photon absorption. Both the emergence length of ballistic hot electrons and the heat diffusion length are negligible in these thin film materials. The lower bulk value of the threshold fluence of the a-C x N y films as compared to ta-C is mainly controlled by optical contributions due to nitrogen-related defects.

show abstract

“…The possible process for volume expansion is graphitization of a-C, i.e., phase transition from sp 3 to sp 2 bonding. This damage phenomenon is general for diamondlike material submitted to intense flux of photons 1,7 or particles. In the case of a-C, the exact structure of the graphitized material can differ due to the different carbon structures ͑graphite plane, nanocrystallite, rings 8 ͒.…”

mentioning

confidence: 99%

Damage of amorphous carbon induced by soft x-ray femtosecond pulses above and below the critical angle

Chalupský

Hájková

Altapova

et al. 2009

Applied Physics Letters

View full text Add to dashboard Cite

We present results of damage studies conducted at the Free Electron LASer in Hamburg ͑FLASH͒ facility with 13.5 nm ͑91.8 eV͒ and 7 nm ͑177.1 eV͒ radiations. The laser beam was focused on a sample of 890-nm-thick amorphous carbon coated on a silicon wafer mimicking a x-ray mirror. The fluence threshold for graphitization was determined for different grazing angles above and below the critical angle. The observed angular dependence of F th is explained by the variation in absorption depth and reflectivity. Moreover, the absorbed local dose needed for the phase transition leading to graphitization is shown to vary with the radiation wavelength.

show abstract

Femtosecond laser ablation of diamond-like carbon films

Cited by 61 publications

References 26 publications

Modification of amorphous a-C:H films by laser irradiation

Modification of amorphous a-C:H films by laser irradiation

Femtosecond laser interaction with pulsed-laser deposited carbon thin films of nanoscale thickness

Damage of amorphous carbon induced by soft x-ray femtosecond pulses above and below the critical angle

Contact Info

Product

Resources

About