Features of Two-Dimensional Bifurcations during Dissipative Electron Tunneling in Arrays of Au Nanoparticles

Influence of an External Electric Field and Dissipative Tunneling on Recombination Radiation in Quantum Dots

“…Thus, for metallic (golden and zirconium) quantum dots synthesized in a dielectric matrix, in a system of a combined atomic force and scanning tunneling microscope at a certain value of the external electric field strength, when the model double-well 1D-oscillator potential becomes symmetric, in the limit of weak dissipation in the field dependence of the tunneling probability, a single temperature-dependent peak is observed [ 1 ]. In the case of planar structures with synthesized QDs from colloidal gold, the field dependence of 2D dissipative tunneling can exhibit single and double bifurcations in the form of characteristic kinks, in the vicinity of which quantum beat regimes are realized [ 3 ]. In the strong dissipation limit for single InAs QDs, taking into account the influence of two local phonon modes on the field dependence of the probability of 1D dissipative tunneling, an oscillating mode with a nonequidistant spectrum of peaks was observed, which qualitatively coincides with the experimental I–V characteristic [ 2 ].…”

“…Taking into account the results obtained earlier in [1][2][3][4]26], the model Hamiltonian of the system can be written as ( )…”

“…Then the model renormalized 1D potential can be represented in the standard form ( Figure A3 ). Taking into account the results obtained earlier in [ 1 , 2 , 3 , 4 , 26 ], the model Hamiltonian of the system can be written as

Figure A3 Potential energy of a particle along the tunneling coordinate.

where The probability of particle tunneling per unit time can be found in the semiclassical approximation.…”

“…Research in this field, in particular, based on quantum dots with impurity complexes in the external control electric field, is undoubtedly a topical area of research in the field of modern optoelectronics. An important factor that significantly determines the optical response of quantum dots, in addition to the external electric field, is the influence of the surrounding matrix within the framework of the dissipative tunneling mechanism [ 1 , 2 , 3 , 4 ]. When discussing the effect of the surface on the photoluminescence of semiconductor quantum dots during the development of quantum sensors, it was noted [ 5 ] that it is important to take into account as role of recombination radiation as also tunneling mechanism.…”

“…When discussing the effect of the surface on the photoluminescence of semiconductor quantum dots during the development of quantum sensors, it was noted [ 5 ] that it is important to take into account as role of recombination radiation as also tunneling mechanism. Among the possible mechanisms of the quantum dots interaction with the environment (with the heat-bath), we propose to take into account the mechanism of quantum tunneling with dissipation [ 1 , 2 , 3 , 4 ]. In addition, as model parameters of dissipative tunneling, it is necessary to take into account the temperature of the matrix surrounding the quantum dot with the impurity complex “ A + + e ”) in the external control electric field, the parameter of interaction with the contact medium (with the heat-bath), frequencies of optical and acoustic phonon modes of the heat-bath matrix.…”