Features of Structural Inhomogeneities in Doped Cadmium Antimonide Crystals

Abstract

The paper presents the results of research to identify inhomogeneities in tellurium doped CdSb crystals. The work aims to investigate the influence of structural inhomogeneities and establish the presence of periodicity in the distribution of data inhomogeneities. It was found with a two-probe compensation method, optical topography method, scanning electron microscopy, and EDX-analysis the presence layered structure with several layers of types, characterized by different periods.

Особливості Кінетичних Ефектів В Напівпровідникових Монокристалах З Неоднорідним Розподілом Домішок

“…During the researches of division of specific resistance on length of the exemplars cut out parallel and athwart to growth to the crystal, the presence of the stratified periodic heterogeneities is discovered in direction of growth of monocrystals of CdSb, that results in appearance in this direction of gradients of specific resistance [3], and accordingly, predetermines formation of the internal electric fields. It is confirmed by researches of switching effect from high-resistance in the low-resistance state of monocrystals of antimonide of cadmium of alloyed by tellurium, which volt-ampere characteristic of the exemplars cut out parallel (I group) and perpendicular (II group) to growth to the crystal were taken off during, at the different levels of illumination.…”

Kinetic effects in cadmium antimonide crystals before and after gamma-irradiation

“…The decrease in the concentration in CdSb<In> is explained by the removal of electrons from the conduction band, which is likely to cause, according to [9], the formation of radiation defects with deep levels in the bandgap of the crystal. In addition, the CdSb crystals are characterized by the existence of heterogeneities in the distribution of impurities along the growth axis, which in turn can significantly affect the value of kinetic coefficients [14].…”