2017
DOI: 10.1016/j.vacuum.2017.03.015
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Features of microstructure of ZrN, Si 3 N 4 and ZrN/SiN x nanoscale films irradiated by Xe ions

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Cited by 18 publications
(8 citation statements)
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“…The SRIM-2013 [39] calculation of H + irradiation was performed on Zr/Nb multilayered systems with individual layer thicknesses of 25 nm and 100 nm and a total thickness of 1 µm ( Figure 2). The simulation was carried out using ion distribution and a quick calculation of damage mode with perpendicular 900 keV H + beam, where the total number of incident particles was 5 × 10 5 . The presence of an 11 µm aluminum energy degrader was taken into account.…”
Section: Srim Calculationsmentioning
confidence: 99%
See 1 more Smart Citation
“…The SRIM-2013 [39] calculation of H + irradiation was performed on Zr/Nb multilayered systems with individual layer thicknesses of 25 nm and 100 nm and a total thickness of 1 µm ( Figure 2). The simulation was carried out using ion distribution and a quick calculation of damage mode with perpendicular 900 keV H + beam, where the total number of incident particles was 5 × 10 5 . The presence of an 11 µm aluminum energy degrader was taken into account.…”
Section: Srim Calculationsmentioning
confidence: 99%
“…Radiation-induced defects and the corresponding changes in mechanical properties in irradiated materials have been carefully studied in recent decades for various multilayer coatings [1][2][3][4][5][6][7]. These structures with various crystal structures are widely used as self-healing coatings in radiation point defects, where vacancies and interstitials can recombine [8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%
“…30 SiN x was selected due to its dielectric character as well as the thermal stability of the conductive nitride/Si 3 N 4 nanostructures. 56 For the selected samples, steps 3 and 4 were repeated in situ to form multistacks of TiN or ZrN nanostructures to enhance their far-field plasmonic features.…”
Section: Resultsmentioning
confidence: 99%
“…1. Зависимость энергии связи свободных nc-TiN нанокристаллов от размера [9], эффективный модуль упругости Юнга наноструктурированного материала для случая малой объемной доли включений запишется как В ряде экспериментов показано, что наноструктурированные материалы обладают более высокой радиационной стойкостью [1][2][3]. Это связывается в первую очередь с геттерирующей способностью наноразмерных включений.…”
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