Features of degradation in high-voltage 4H-SiC p-i-n diodes under the action of forward current pulses

Levinshteǐn, M. E.; Иванов, П. А.; Palmour, John W.; Agarwal, Anant; Das, Mrinal K.

doi:10.1134/s1063785011040237

Tech. Phys. Lett.

2011

DOI: 10.1134/s1063785011040237

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Features of degradation in high-voltage 4H-SiC p-i-n diodes under the action of forward current pulses

M. E. Levinshteǐn

П. А. Иванов

John W. Palmour

et al.

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Features of degradation in high-voltage 4H-SiC p-i-n diodes under the action of forward current pulses

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References 7 publications

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