Features and benefits of III-N growth by ammonia-MBE and plasma assisted MBE

Alexeev, A. N.; Chaly, V. P.; Krasovitsky, D. M.; Mamaev, V. V.; Петров, С. М.; Sidorov, V. G.

doi:10.1088/1742-6596/541/1/012030

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“…With a gas source growth process supplying active nitrogen species by surface-catalyzed pyrolysis, such as NH 3 -MBE, the high energy plasma source to activate nitrogen is not needed, and the luminescence properties are expected to improve. In addition, the growth windows that can be used in NH 3 -MBE have been shown to be much larger than for PA-MBE, so that a wider range growth regimes can be accessed [28,29]. Particularly, this enables the use of higher temperatures than typical with MBE, with increased metal adatom surface mobility and reduced impurity incorporation.…”

Section: Introductionmentioning

confidence: 99%

GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

Lin

Leung

Figiel

et al. 2015

Journal of Crystal Growth

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a b s t r a c tAmmonia-based molecular beam epitaxy (NH 3 -MBE) was used to grow catalyst-assisted GaN nanowires on ð1102Þ r-plane sapphire substrates. Dislocation free ½1120 oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar f1010g side facets, which appear due to a decrease in relative growth rate of the f1010g facets to the f1011g and f1011g facets under the growth regime in NH 3 -MBE. Compared to GaN nanowires grown by Ni-catalyzed metal-organic chemical vapor deposition, the NH 3 -MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

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Section: Introductionmentioning

confidence: 99%