Feasibility study of TlBr semiconductor detectors for PIXE applications

Nogami, Mitsuhiro; Hitomi, Keitaro; Onodera, Toshiyuki; Matsumoto, Kio; Watanabe, K.; Terakawa, A.

doi:10.1016/j.nimb.2019.10.003

Cited by 7 publications

(3 citation statements)

References 7 publications

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“…(3,4) GaN has numerous attractive properties, such as a wide bandgap and high thermal stability, which render it suitable for radiation detection at room temperature. Various materials have been studied as promising radiation detectors, including silicon (Si), (5)(6)(7) cadmium telluride (CdTe), (8)(9)(10) cadmium zinc telluride (CZT), (11,12) silicon carbide (SiC), (13,14) thallium bromide (TlBr), (15)(16)(17) and GaN. (18,19) BGaN, an alloy crystal containing BN and GaN, has recently been proposed as a neutron detector semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector

Nakagawa,

Hayashi,

Miyazawa

et al. 2024

Sensors and Materials

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Group-III nitride semiconductors, such as gallium nitride (GaN), have been proposed as novel materials for radiation detection owing to their wide bandgap and their ability to operate at high temperatures. In this study, the radiation detection properties of GaN PIN diode detectors were evaluated at high temperatures (~573 K). The energy spectrum peak profiles of 241 Am α-particles were obtained at different temperatures, confirming the operation of GaN PIN diodes up to 573 K. The peak positions shifted toward the lower-energy side and the full width at half maximum (FWHM) of the detection energy peak improved with increasing temperature. Furthermore, the variation in electron carrier mobility-lifetime product (μ e τ e ) between 293 and 573 K was not significant. These results indicate the potential high-temperature operation of group-III nitride semiconductors. Additionally, the variation in each detection characteristic was caused by increasing the atmospheric temperature, which affected the mobility, lattice scattering, bandgap, and built-in potential differently.

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Section: Introductionmentioning

confidence: 99%

Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector

Nakagawa,

Hayashi,

Miyazawa

et al. 2024

Sensors and Materials

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“…25) However, long-term operation of TlBr detectors requires periodic bias switching. 26) Singlepolarity charge-sensing configurations, such as pixelated detectors 27) and capacitive Frisch grid detectors, 11) exhibit excellent energy resolutions. In these detectors, the anode signals are mainly produced by electrons and scarcely affected by hole collection, resulting in better energy resolutions than planar detectors, wherein both electrons and holes contribute to the induced signals.…”

Section: Introductionmentioning

confidence: 99%

Reversible capacitive Frisch grid TlBr detectors

Nogami,

Hitomi,

Onodera

et al. 2023

Jpn. J. Appl. Phys.

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A reversible capacitive Frisch grid detector was fabricated using a thallium bromide (TlBr) crystal with a symmetrical electrode design. The device operates by switching the polarity of the applied voltage, which is necessary for a stable TlBr detector operation. A 2 mm × 2 mm × 5 mm bar-shaped TlBr crystal was used to construct the detector, which exhibited an (full width at half maximum) energy resolution of 1.9 % for 662-keV γ-rays measured using a depth correction method at room temperature. The TlBr detector also showed a stable operation for 8 h of with hourly bias switching. 

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“…(1)(2)(3) Scintillators are generally combined with photodetectors such as a photomultiplier tube (PMT) and a Si photodiode, and such sensors are called scintillation detectors. (4) When compared with semiconductor detectors, (5)(6)(7)(8) which are also common ionizing radiation detectors, scintillation detectors have some advantages especially in terms of detection efficiency and response speed. Owing to such properties, scintillation detectors are used in medicine, (9) security, (10) environmental monitoring, (11) biology, (12) resource extrapolation, (13) and high-energy physics.…”

Section: Introductionmentioning

confidence: 99%

Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals

Yanagida¹,

Kato²,

Nakauchi³

et al. 2022

Sensors and Materials

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Non-doped and 0.1, 0.5, 1.0, and 2.0% Ce-doped (Gd 0.4 Lu 0.6 ) 8 Sr 2 (SiO 4 ) 6 O 2 crystals were prepared and their optical and scintillation properties were investigated. Their X-ray diffraction (XRD) patterns confirmed that the Ce-doped samples did not contain an impurity phase, whereas the non-doped one contained some impurity phases such as Gd 2 SiO 5 and Lu 2 SiO 5 . The emission due to 5d-4f transitions of Ce 3+ was observed at 380-650 nm in both the photoluminescence (PL) and scintillation spectra of the Ce-doped samples. The scintillation light yields (LYs) of the 0.5 and 1.0% Ce-doped samples under 241 Am α-ray irradiation were ~230 and ~620 ph/5.5 MeV-α, respectively.

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Feasibility study of TlBr semiconductor detectors for PIXE applications

Cited by 7 publications

References 7 publications

Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector

Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector

Reversible capacitive Frisch grid TlBr detectors

Growth, Optical, and Scintillation Properties of (Gd0.4Lu0.6)8Sr2(SiO4)6O2 Crystals

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