Feasibility Study of Conical Channel Nanowire MOSFETs for Improved Performance

Nikhil, KrishnanNadar Savithry; Bindu, B.

doi:10.1016/j.proeng.2012.06.282

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…In the present state of affairs, gate-all-around (GAA) technology has become a strong entrant in the nanoscience and nanotechnology sphere, with its improvement in drain current and suppression of short channel effects offering great promise. Cylindrical surrounded gate (CSG) metal-oxide-semiconductor field effect transistor (MOSFET) is one of the emerging members of GAA family which is the most probable victor for present complementary metal-oxide-semiconductor (CMOS) technology [1][2][3][4][5][6]. Every day this unique device is producing considerable surprises in the technologically imperative and application-rich areas.…”

Section: Introductionmentioning

confidence: 99%

Conical surrounding gate MOSFET: a possibility in gate-all-around family

Jena

Ramkrishna

Dash

et al. 2016

Adv. Nat. Sci: Nanosci. Nanotechnol.

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In this paper a new conical surrounding gate metal-oxide-semiconductor field effect transistor (MOSFET) with triple-material gate has been proposed and verified using TCAD device simulator from Synopsis. The electrostatic performance of conical model with different tapering ratios is extensively investigated and compared with that of cylindrical model (tapering ratio TR = 1). The present model exhibits improved electrostatic behavior for an optimized tapering ratio of 0.98 as compared to the conventional cylindrical model. The results reveal that the triple-material conical model provides better ON current performance, transconductance and reduced threshold voltage. On the contrary the single-material conical model exhibits maximum / ratio, minimum OFF current and reduced subthreshold swing (SS) in comparison to other models. Thus, the conical model with optimized tapering ratio can be a possible replacement of cylindrical model for low-power and high speed application.

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