Feasibility Study for Usage of Diluted Fluorine for Chamber Clean Etch Applications as an Environmental Friendly Replacement of NF<sub>3</sub>

Hellriegel, Ronald; Hintze, B.; Winzig, Hubert; Albert, Matthias; Bartha, Johann W.; Schwarze, Thomas; Pittroff, Michael

doi:10.1557/proc-0914-f09-23

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…Regular removal of those residuals has to be done to obtain stable and repeatable deposition results with uniform surfaces at acceptable particle levels [1] . Since long time, chamber cleaning gases like Tetrafluoromethane (CF 4 ) and Hexafluoroethane (C 2 F 6 ) are used [2,3,4] .…”

Section: Introductionmentioning

confidence: 99%

Superior etch performance of Ar/N₂/F₂ for PECVD chamber clean

Riva

Pittroff

Schwarze

et al. 2009

2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

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F 2 gas mixtures offer ideal properties to be employed as chamber cleaning gas: low dissociation energy and high reactivity, which leads to superior efficiency and ease of abatement. In this work, a new F 2 gas mixture was used with a combination ratio of 10% Ar, 20% F 2 and 70% N 2 in order to obtain a maximum of 20% fluorine in inert gases. This novel Ar/N 2 /F 2 gas mixture has been evaluated as a candidate to replace conventional cleaning gases, like NF 3 , C 2 F 6 and CF 4 in an industrial AMAT P5000 CVD chamber tool. Standard equipment has been used, showing complete compatibility with the new gas. The tested Ar/N 2 /F 2 mixture shows improvements in both parameters, cleaning at a faster rate (up to more 27%), even requiring a lower amount of gas (minus 96% versus NF 3 ). The higher etching rate and the lower gas consumption assure a sensible CoO (Cost of Ownership) advantage to any potential user. The superior etch rate performance of the Ar/N 2 /F 2 gas mixture was combined with excellent etch non uniformities values, of ±3% (1sigma) on SiO 2 and of ±8% (1sigma) on Si 3 N 4 , respectively. Also amorphous Silicon (a-Si) was etched completely and uniformly. The particle performance data showing in average just 14 particle adders (0.25µm), indicating that no significant particle contamination was induced by the process and Ar/N 2 /F 2 can be used as a highly clean and efficient etching gas as well as an ideal drop-in replacement for the conventional cleaning gases.

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Section: Introductionmentioning

confidence: 99%

Superior etch performance of Ar/N₂/F₂ for PECVD chamber clean

Riva

Pittroff

Schwarze

et al. 2009

2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

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“…Studies have been conducted to replace NF 3 [16,17]. Among them, F 3 NO was considered a candidate gas to replace NF 3 [18].…”

Section: Introductionmentioning

confidence: 99%

Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer

et al. 2021

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The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF3 is required. F3NO is considered a potential replacement to NF3. In this study, the characteristics and cleaning performance of the F3NO plasma to replace the greenhouse gas NF3 were examined. Etching of SiO2 thin films was performed, the DC offset of the plasma of both gases (i.e., NF3 and F3NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F3NO plasma were studied, and the SiO2 etch rates of the NF3 and F3NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F3NO plasma was demonstrated, and the potential benefit of replacing NF3 with F3NO was confirmed.

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Feasibility Study for Usage of Diluted Fluorine for Chamber Clean Etch Applications as an Environmental Friendly Replacement of NF₃

Cited by 2 publications

References 5 publications

Superior etch performance of Ar/N₂/F₂ for PECVD chamber clean

Superior etch performance of Ar/N₂/F₂ for PECVD chamber clean

Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer

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Feasibility Study for Usage of Diluted Fluorine for Chamber Clean Etch Applications as an Environmental Friendly Replacement of NF3

Cited by 2 publications

References 5 publications

Superior etch performance of Ar/N2/F2 for PECVD chamber clean

Superior etch performance of Ar/N2/F2 for PECVD chamber clean

Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer

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Product

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Feasibility Study for Usage of Diluted Fluorine for Chamber Clean Etch Applications as an Environmental Friendly Replacement of NF₃

Superior etch performance of Ar/N₂/F₂ for PECVD chamber clean

Superior etch performance of Ar/N₂/F₂ for PECVD chamber clean