Feasibility of lasing in the GaAs Reststrahlen band with HgTe multiple quantum well laser diodes

Abstract

Operation of semiconductor lasers in the 20–50 µm wavelength range is hindered by strong non-radiative recombination in the interband laser diodes, and strong lattice absorption in GaAs-based quantum cascade structures. Here, we propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. Using a comprehensive model accounting for carrier drift and diffusion, electron and hole capture in quantum wells, Auger recombination, and heating effects, we show the feasibility of lasing at λ = 26, …, 30 µm at temperatures up to 90 K. The output power in the pulse can reach up to 8 mW for microsecond-duration pulses.

Hot phonon effects and suppressed Auger recombination on 3 $μ$m room temperature lasing in HgTe-based multiple quantum well diodes

“…6 [22]. For a drive current of 16 A, the output power reduces from 1000 to 150 mW during a 100 ns pulse.…”

“…In our calculations of the interband recombination we included both the radiative and Auger processes [22,[39][40][41]. In this work, the coefficient of Auger recombination was calculated numerically.…”

“…The main factors that limit the temperature characteristics of mid-infrared (IR) semiconductor lasers are Auger recombination on the QWs, non-equilibrium carrier heating and Drude absorption of the free carriers. Although yet there is no experimental demonstration of injection lasers based on heterostructures with HgTe QWs, there are several theoretical proposals of diode laser aimed for mid- [15] and far-IR [22] operation as well as THz quantum cascade laser [23] based on HgCdTe. In this work given the experimental results demonstrating stimulated emission under optical pumping [19][20][21] and suppression of Auger recombination in HgTe QWs [16,24] we investigate the feasibility of HgCdTe-based injection lasers.…”

Hot phonon effects and Auger recombination on 3 μm room temperature lasing in HgTe-based multiple quantum well diodes

“…The self-consistent distributed model for calculating the electrophysical, optical, and thermal processes in injection lasers under pulse pumping is described in detail in Ref. 32. The model is based on quasi-stationary solutions for the photon density in the cavity.…”

“…In our calculations of the interband recombination, we included both the radiative and Auger processes. 32,[50][51][52] In this work, the coefficient of Auger recombination was calculated numerically. For a process involving two electrons and one hole, the coefficient C nnp was found from the expression…”