2006 International Conference on Electronic Materials and Packaging 2006
DOI: 10.1109/emap.2006.4430570
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FEA Thermal Investigation of Wafer Thinning by Plasma Etching

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(2 citation statements)
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“…In other words, from the perspective of the low-stage cycle, the cascade heat exchanger serves as the aftercooler of the previously introduced single MR. Next, the flow of the refrigerant in the low-stage cycle is discussed. The refrigerant discharged from the low-stage compressor in a state of high-temperature, high-pressure vapor is partially condensed (5-6), which is then condensed into a fully liquid refrigerant through the internal heat exchange in the intermediate heat exchanger (6)(7) and passes through the expansion valve (7)(8). The liquid refrigerant that has passed through is in a state of low temperature and exchanges heat with the brine Ultra-Low Temperature Chillers for Semiconductor Manufacturing Process DOI: http://dx.doi.org/10.5772/intechopen.98547 in the evaporator, resulting in partial evaporation (8)(9).…”
Section: Cascade Mixed Refrigerant (Mr) Refrigeratormentioning
confidence: 99%
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“…In other words, from the perspective of the low-stage cycle, the cascade heat exchanger serves as the aftercooler of the previously introduced single MR. Next, the flow of the refrigerant in the low-stage cycle is discussed. The refrigerant discharged from the low-stage compressor in a state of high-temperature, high-pressure vapor is partially condensed (5-6), which is then condensed into a fully liquid refrigerant through the internal heat exchange in the intermediate heat exchanger (6)(7) and passes through the expansion valve (7)(8). The liquid refrigerant that has passed through is in a state of low temperature and exchanges heat with the brine Ultra-Low Temperature Chillers for Semiconductor Manufacturing Process DOI: http://dx.doi.org/10.5772/intechopen.98547 in the evaporator, resulting in partial evaporation (8)(9).…”
Section: Cascade Mixed Refrigerant (Mr) Refrigeratormentioning
confidence: 99%
“…The typical method is to create plasma gas with excellent etching properties and etch a specified part of the wafer [6,7]. Here, there might be a risk of an excessive rise in wafer temperature when it is exposed to the high temperature of the plasma [8]. Therefore, general etching devices cool the wafers by circulating the cooling medium inside the electrostatic chuck (ESC) where the wafers are installed [9].…”
Section: Introductionmentioning
confidence: 99%