Fe‐Related Defects in Si: Laplace Deep‐Level Transient Spectroscopy Studies

Abstract

Herein, the electrical properties of Fe‐related defects in hydrogenated n‐ and p‐type Si doped with iron during the crystal growth in a vacancy mode are investigated. Six deep‐level transient spectroscopy (DLTS) peaks labeled Fei, FeB, CH, E125FeH, E145Fe, and E240Fe are observed in as‐grown n‐ and p‐type Si after wet chemical etching (WCE). By comparing the electrical properties of the defects with those previously reported in the literature, Fei is correlated with interstitial iron, FeB with an iron–boron complex, and C–H with a carbon–hydrogen complex in Si. No traces of the peak previously assigned to the single donor state of FeiH are observed after reverse bias annealing at 110 °C in hydrogenated Si. By analyzing the depth profiles of the defects in n‐type Si, it is shown that E125FeH comprises only one H atom. The electrical and annealing properties of E125FeH, E145Fe, and E240Fe are investigated and their origin is discussed.