Abstract:Herein, the electrical properties of Fe‐related defects in hydrogenated n‐ and p‐type Si doped with iron during the crystal growth in a vacancy mode are investigated. Six deep‐level transient spectroscopy (DLTS) peaks labeled Fei, FeB, CH, E125FeH, E145Fe, and E240Fe are observed in as‐grown n‐ and p‐type Si after wet chemical etching (WCE). By comparing the electrical properties of the defects with those previously reported in the literature, Fei is correlated with interstitial iron, FeB with an iron–boron co… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.