2022
DOI: 10.1039/d2ta06008f
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Fe/Fe3C modification to effectively achieve high-performance Si–C anode materials

Abstract: For high-performance silicon-carbon (Si-C) based anode materials used in high energy-density lithium ion batteries (LIBs), it is an urgent need to rationally construct a stable SEI film and load a...

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Cited by 15 publications
(11 citation statements)
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“…Then, the hump disappeared subsequently from the second cycle, demonstrating that the generated SEI film remained stable during the following cycles. Meantime, the reduction peak at 0.19 V appeared due to the lithiation process to generate Li x Si . Upon the anodic scanning, two oxidation peaks at about 0.35 and 0.50 V were ascribed to the delithiation process of the Li x Si phase into amorphous Si .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Then, the hump disappeared subsequently from the second cycle, demonstrating that the generated SEI film remained stable during the following cycles. Meantime, the reduction peak at 0.19 V appeared due to the lithiation process to generate Li x Si . Upon the anodic scanning, two oxidation peaks at about 0.35 and 0.50 V were ascribed to the delithiation process of the Li x Si phase into amorphous Si .…”
Section: Resultsmentioning
confidence: 99%
“…Meantime, the reduction peak at 0.19 V appeared due to the lithiation process to generate Li x Si. 39 Upon the anodic scanning, two oxidation peaks at about 0.35 and 0.50 V were ascribed to the delithiation process of the Li x Si phase into amorphous Si. 29 Interestingly, the intensities of the redox peaks were gradually enhanced with scanning cycle increasing.…”
Section: Structural Characterization Of the Integrated Si@ C−cu Anodementioning
confidence: 99%
“…39 Lin et al prepared the compound (Fe/Fe 3 C–Si@CNFs) through an electrospinning instrument, which promoted the Li + diffusion kinetics and enhanced the interfacial compatibility. 6 Although the void space, structural strength, and electrical connection of these carbon–silicon composites have been optimized, they still face the major challenge of achieving dynamic electrical connection and mechanical buffering between the silicon nanoparticle core and the carbon shell in the compact space. 30,35 Therefore, the efficient design of a silicon–carbon structure should meet the following key conditions: (1) good conductive contact between the inner-silicon and carbon shell; 40 (2) rigid shell to cushion the damage of the electrode structure caused by the silicon volume change; 41 (3) superior behavior of lithiation and de-lithiation for the long-cycle stability.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5] However, the limited theoretical specic capacity (372 mA h g −1 ) of graphite, which is commonly used as the anode material, struggles to meet the requirement for the high energy density of next-generation LIBs. [6][7][8][9][10] Endowed with exceptional specic capacity (4200 mA h g −1 ) and low reduction potential (<0.5 V), the silicon anode substance has been developing as a promising substitute for high energy density LIBs. [11][12][13] However, during the lithiation and de-lithiation processes, facing the adverse factors of low conductivity, large volume change and poor adhesiveness, the silicon anode suffers from inferior electrode compatibility, rebarbative powder pulverization, and inadequacy mechanical stress.…”
Section: Introductionmentioning
confidence: 99%
“…The hierarchical conductive network composed of folded graphite and CNTs not only promotes electron transfer but also relieves the volume expansion stress of Si. , However, there exist several problems such as mechanical fracture, poor interfacial combination, and low initial Coulombic efficiency in mostly reported Si/C composites. Adding another component is considered to be an effective method to improve the overall performance of Si/C composites. It is revealed that iron oxide (Fe 3 O 4 , Fe 2 O 3 ) can buffer volume expansion and stabilize the solid electrolyte interface (SEI) film. , For example, Fe 2 O 3 coating on the Si surface promotes the formation of a uniform and dense SEI film and significantly improves the rate capability and storage capability. , …”
Section: Introductionmentioning
confidence: 99%