Fault Detection Circuit Based on IGBT Gate Signal

Flores, E.; Claudio, A.; Aguayo, J.; Hernandez, Ladia M.

doi:10.1109/tla.2016.7437190

Cited by 8 publications

(1 citation statement)

References 26 publications

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“…Miller plateau analysis can detect short-circuit condition according to the relationship of Miller plateau voltage and collector current [5,6]. For VGE monitoring [7][8][9][10], when IGBT turns on under hard switching failure (HSF), the Miller plateau would not exist in gate voltage turn-on transient. While fault under load (FUL) occurs, the gate voltage of IGBT can suddenly increase higher than the power supply voltage.…”

Section: Introductionmentioning

confidence: 99%

A self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection

Zhu

Cheng

Xia

et al. 2020

IEICE Electron. Express

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This paper proposed a self-adaptive blanking time (SABT) circuit for fast IGBT de-saturation short-circuit detection. When IGBT normally turns on or experiences fault under load (FUL), the blanking time is implemented by detecting the variation of IGBT collector-toemitter voltage VCE. While when IGBT is under hard switching failure (HSF), the blanking time is determined by detecting gate voltage VGE. The simulation with the UMC 0.6 μm 700 V technology indicates that the proposed SABT circuit can quickly detect FUL and HSF. Compared to the conventional blanking time circuit, the SABT circuit can shorten the fault detection time of FUL from 1.3 μs to 35.5 ns, while the fault detection time of HSF condition is reduced from 2.329 μs to 294 ns.

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