Fault-based reliable design-on-upper-bound of electronic systems for terrestrial radiation including muons, electrons, protons and low energy neutrons

Ibe, Eishi; Toba, Tadanobu; Shimbo, Kenichi; Taniguchi, Hitoshi

doi:10.1109/iolts.2012.6313840

Cited by 8 publications

(1 citation statement)

References 14 publications

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“…This spectrum excludes positrons at energy of 0.2 MeV, which are present in the experimental spectrum. Any contribution of positron-induced errors to the overall error rate is negligible since positrons (similar to electrons) have 1 order lower LET in Si compared to muons with the same particle energy range [11]. The spectrum in Fig.…”

Section: Modeling Of Muon Related Ser For Sram Circuitsmentioning

confidence: 97%

Muon-Induced Soft Errors in SRAM Circuits in the Terrestrial Environment

Fang

Oates

2015

IEEE Trans. Device Mater. Relib.

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Muon-induced soft errors are an increasing concern with technology scaling. However, the impact of terrestrial muons to the failure rate of circuits is unclear as methodologies have not yet been developed to extrapolate from accelerated measurements to the terrestrial environment. We introduce a new method to estimate muon-induced soft error rates (SERs) in SRAM devices by equating the muon energy spectrum with an alpha particle energy spectrum with an equivalent LET. Using this method, we estimate that, in the terrestrial environment, a muon-induced SER is smaller than that from packaging-related alpha particle and cosmic ray neutron components. FinFET SRAM devices will show a much reduced muon SER compared with planar transistors due to the minimization of charge collection associated with the fin geometry.Index Terms-Single event upsets (SEU), soft error rate (SER), muon particle.

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Section: Modeling Of Muon Related Ser For Sram Circuitsmentioning

confidence: 97%