2019
DOI: 10.1109/jstqe.2019.2912034
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Fast Wavelength-Tunable Lasers on Silicon

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Cited by 10 publications
(6 citation statements)
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“…Note that these two steps are optional, as appropriate, and can be adjusted in parallel with ROADM reconfiguration because they affect the transponders only. Prior work has demonstrated frequency tuning [10,29] and modulation change [76,77] in milliseconds.…”
Section: Production-level Testbedmentioning
confidence: 99%
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“…Note that these two steps are optional, as appropriate, and can be adjusted in parallel with ROADM reconfiguration because they affect the transponders only. Prior work has demonstrated frequency tuning [10,29] and modulation change [76,77] in milliseconds.…”
Section: Production-level Testbedmentioning
confidence: 99%
“…Constraints. Constraints (28)(29)(30) are identical to Constraints (1-3) in Table 2, Constraints (7-9) in Table 3 and Constraints (18)(19)(20) process with multiple observe-analyze-act control loops that takes several minutes per amplifier. To understand the current practice, we shadowed the process of reconfiguring four wavelengths on a 2,000 km fiber path with 24 cascaded amplifier sites between Canada and US in Facebook.…”
Section: A5 Binary Ilp Formulation For Arrow's Te With Lotteryticketsmentioning
confidence: 99%
“…To evaluate the performance of the proposed DCN architecture we vary the above switching times over the range 0.1 µs, 1 µs and 10 µs. The intention is to investigate the proposed architecture's performance over a representative range of fast tunable transmitter technologies (class 1: < 10 µs), as reported in [30].…”
Section: B Simulation Parametersmentioning
confidence: 99%
“…With explosive data generation, the accompanying demand for an increasingly high data transmission rate between chips is pushing copper wire to its limit. , To overcome this problem, the silicon photonic chip has emerged as a star alternative, and it is believed that such a photonic chip will revolutionize optical interconnections with its complementary metal-oxide-semiconductor (CMOS) compatible fabrication process. Despite the significant advances in passive components such as waveguides, modulators, and detectors, its decisive success suffers greatly from the lack of a CMOS-compatible monolithic light source due to the indirect bandgap nature of silicon and germanium. Although III–V group semiconductor lasers have been successfully integrated into silicon photonic chips as an alternative solution, the preference for a real CMOS silicon laser has inspired the relentless search for any possibility up to now. For instance, silicon lasers utilizing the Raman effect with a low threshold were reported in 2007, and silicon-based Brillouin lasing was also demonstrated in 2018 .…”
mentioning
confidence: 99%
“…W ith explosive data generation, the accompanying demand for an increasingly high data transmission rate between chips is pushing copper wire to its limit. 1,2 To overcome this problem, the silicon photonic chip has emerged as a star alternative, and it is believed that such a photonic chip will revolutionize optical interconnections with its complementary metal-oxide-semiconductor (CMOS) compatible fabrication process. 3−7 Despite the significant advances in passive components such as waveguides, modulators, and detectors, its decisive success suffers greatly from the lack of a CMOS-compatible monolithic light source due to the indirect bandgap nature of silicon and germanium.…”
mentioning
confidence: 99%