2017
DOI: 10.1049/el.2016.4541
|View full text |Cite
|
Sign up to set email alerts
|

Fast‐transient high‐performance 0.18 μm CMOS LDO for battery‐powered systems

Abstract: A low-power 0.18 µm CMOS capacitor-less low-dropout voltage regulator for battery-operated portable devices is presented. A highgain telescopic cascode-compensated amplifier is used to attain a stable topology with good static performances, while a very simple dynamic biasing circuit significantly enhances transient performances with no quiescent current penalty. Post-layout results show a 1.8 V output voltage from a 3.6 to 1.9 V battery input voltage, delivering a 50 mA load current over a 100 pF load. The qu… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
10
0

Year Published

2018
2018
2022
2022

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 14 publications
(10 citation statements)
references
References 7 publications
0
10
0
Order By: Relevance
“…Introducing substitution terms given in (22) and integrating both sides of (21) yields the definite integral expressed in (23). Finally, evaluating the integral in the given interval and dividing it by e CA ⋅ t + CB ⋅ t 2 yields v out t expression given in (24). Back substituting the terms in (22) leads to (10) d e (1/V EQ ⋅ C) I RO ⋅ t + sign(Δi load ) ⋅ I PMOS ⋅ f clk ⋅ (t 2 /2) ⋅ v out t dt = e (1/V EQ ⋅ C) I RO ⋅ t + sign(Δi load ) ⋅ I PMOS ⋅ f clk ⋅ (t 2 /2) ⋅ i in t − i load (t) C…”
Section: Appendixmentioning
confidence: 99%
See 1 more Smart Citation
“…Introducing substitution terms given in (22) and integrating both sides of (21) yields the definite integral expressed in (23). Finally, evaluating the integral in the given interval and dividing it by e CA ⋅ t + CB ⋅ t 2 yields v out t expression given in (24). Back substituting the terms in (22) leads to (10) d e (1/V EQ ⋅ C) I RO ⋅ t + sign(Δi load ) ⋅ I PMOS ⋅ f clk ⋅ (t 2 /2) ⋅ v out t dt = e (1/V EQ ⋅ C) I RO ⋅ t + sign(Δi load ) ⋅ I PMOS ⋅ f clk ⋅ (t 2 /2) ⋅ i in t − i load (t) C…”
Section: Appendixmentioning
confidence: 99%
“…Complimentary to these techniques, this work develops models for estimating digital LDO transient behaviours, such as ripple magnitudes after load current or voltage reference changes. Recently, various techniques to enhance LDO transient response, such as using dual control loops in [22], dynamic biasing in [24], or event‐driving logic in [25], have been reported. Such enhance techniques can be included LDO modelling as shown in [22, 25].…”
Section: Related Workmentioning
confidence: 99%
“…But this requires extra external pins and cannot be integrated into the whole chip. To remove external components and reduce system size, capacitorless LDOs are proposed in [2][3][4][5][6][7]. But all previous LDOs have trade-offs between wide input and load current ranges, the need for large off-chip capacitors, and output transient response.…”
Section: Introductionmentioning
confidence: 99%
“…A low-dropout (LDO) regulator that supplies low noise, ripple-free supply voltages to many different blocks is one of the core circuits of the power management system. LDOs require the elimination of external capacitors to increase density and reduce quiescent current to prolong the battery cycle [1][2][3][4][5][6][7][8][9]. However, an external capacitorless LDO with a low quiescent current has a problem that the undershoot/overshoot voltage is increased for sudden load variation and the load transient response performance is degraded [3,[10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%