Fast synchrotron and FEL beam monitors based on single-crystal diamond detectors and InGaAs/InAlAs quantum well devices

Antonelli, M.; Fraia, Michele Di; Carrato, Sergio; Cautero, G.; Menk, R.H.; Jark, W.; Ganbold, Tamiraa; Biasiol, G.; Callegari, Carlo; Coreno, Marcello; Sio, A. De; Pace, E.

doi:10.1016/j.nima.2013.03.047

Cited by 17 publications

(12 citation statements)

References 7 publications

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“…Many of these devices, such as detectors, substrates, x-ray mirrors and diffractive optics, involve carbon-based materials, in particular diamond. [27][28][29][30][31] Thus, good understanding and accurate modeling of the damage mechanisms within irradiated diamond are crucial for the success of further experiments and the operation of FELs.…”

Section: Introductionmentioning

confidence: 99%

Nonthermal graphitization of diamond induced by a femtosecond x-ray laser pulse

2013

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Diamond irradiated with an ultrashort intense laser pulse in the regime of photon energies from soft up to hard x rays can undergo a phase transition to graphite. This transition is induced by an excitation of electrons from the valence band or from atomic deep shells of the material into its conduction band, which is followed by a transient rapid change of the interatomic potential. Such a nonthermal phase transition occurs on a femtosecond time scale, shortly after or even during the laser pulse. In this work we show that the duration of the graphitization depends on the incoming photon energy: the higher the photon energy is, the longer the secondary electron cascading which promotes the electrons into the conduction band will take. The transient kinetics of the electronic and atomic processes during the graphitization is analyzed in detail. The damage threshold fluence is calculated in the broad photon energy range and is found to be always ∼0.7 eV/atom in terms of the average dose absorbed per atom. It is confirmed that the temporal characteristics of a femtosecond laser pulse (at a fixed pulse duration and fluence) do not significantly influence the transient damage kinetics. Finally, the influence of an additional surface layer of high-Z material on the damage within diamond is discussed.

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Section: Introductionmentioning

confidence: 99%

Nonthermal graphitization of diamond induced by a femtosecond x-ray laser pulse

2013

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“…Recently, single crystal (SC) CVD diamonds have significantly improved in size and purity [Mokuno et al, 2008[Mokuno et al, , 2010Yamada et al, 2011Yamada et al, , 2013. The SC CVD diamond detectors have been applied for measuring the energy of greater than MeV particles (protons and heavy ions) with fine resolution [e.g., Berdermann et al, 2001;Pomorski et al, 2013;Antonelli et al, 2013;Sato et al, 2013;Schirru et al, 2014]. Our recent study [Ogasawara et al, 2015a] showed that the application of SC CVD diamonds for space plasma detectors is possible by providing a threshold level of 13.8 keV for low-energy (less than hundreds of keV) particles with ∼7 keV energy resolution.…”

Section: Diamond Detectorsmentioning

confidence: 99%

Next‐generation solid‐state detectors for charged particle spectroscopy

et al. 2016

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The performance of silicon avalanche photodiodes (APDs) and single crystal chemical vapor deposit diamond detectors (DDs) is reviewed in comparison with conventional silicon‐based solid‐state detectors (SSDs) from the perspective of space plasma applications. Although the low‐energy threshold and the energy resolution are equivalent to SSDs, DDs offer a high radiation tolerance and very low leakage currents due to a wider band gap than silicon. In addition, DDs can operate at higher temperatures, are insensitive to light (>226 nm), and are capable of timing analysis due to the higher intrinsic carrier mobility. APDs also offer several advantageous features. Specifically, APDs have a lower energy threshold (<0.9 keV) and a higher energy resolution (<0.7 keV full width at half maximum at room temperature), along with a linear response due to a strong electric field causing signal amplifications within the detector. Therefore, APDs can be used to detect lower energy particles, covering a larger portion of the energy spectrum than conventional SSDs. Further, the strong internal electric field gives them a subnanosecond response time by the charge mobility saturation, allowing them to make precise timing measurements of ions. These novel detector techniques can be potentially applied to improve the measurements of suprathermal particles, whose energies lie between typical ranges of conventional sensors for low‐energy plasmas and energetic particles. Although the origin and evolution of the suprathermal particles are the key to understanding the acceleration and heating processes in space plasma, they are not well understood due to the technical difficulties of making the measurement.

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“…As the most direct tool for studying the interaction between light and atoms, molecules and condensed matter, VUV light is involved in many fields of basic science such as spectroscopy and photochemistry, which has become an important driving force for the development of various VUV photodetectors. More importantly, high-performance VUV photodetectors are essential to high-resolution semiconductor lithography [11] (such as 193 nm and 157 nm excimer lithography, 13.5 nm extreme ultraviolet (EUV) lithography), synchrotron and free-electron lasers (FEL) beam monitors [12].…”

Section: Introductionmentioning

confidence: 99%

Vacuum-ultraviolet photodetectors

2020

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High-performance vacuum-ultraviolet (VUV) photodetectors are of great significance to space science, radiation monitoring, electronic industry and basic science. Due to the absolute advantages in VUV selective response and radiation resistance, ultra-wide bandgap semiconductors such as diamond, BN and AlN attract wide interest from researchers, and thus the researches on VUV photodetectors based on these emerging semiconductor materials have made considerable progress in the past 20 years. This paper takes ultra-wide bandgap semiconductor filterless VUV photodetectors with different working mechanisms as the object and gives a systematic review in the aspects of figures of merit, performance evaluation methods and research progress. These miniaturized and easily-integrated photodetectors with low power consumption are expected to achieve efficient VUV dynamic imaging and single photon detection in the future.

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Fast synchrotron and FEL beam monitors based on single-crystal diamond detectors and InGaAs/InAlAs quantum well devices

Cited by 17 publications

References 7 publications

Nonthermal graphitization of diamond induced by a femtosecond x-ray laser pulse

Nonthermal graphitization of diamond induced by a femtosecond x-ray laser pulse

Next‐generation solid‐state detectors for charged particle spectroscopy

Vacuum-ultraviolet photodetectors

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