Fast SiC Switching Limits for Pulsed Power Applications

Collier, L.; Kajiwara, Taiga; Dickens, J.; Mańkowski, J.; Neuber, A.

doi:10.1109/tps.2019.2928535

Cited by 12 publications

(5 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The gate drive circuit requires careful consideration of various external switching factors, including parasitic elements, circuit components, and PCB layout [128]. Traditional commercial gate drivers, often using push-pull or totem-pole driving topologies, are not suitable for high-current switching with rise times on the order of 10-20 ns [129]. Moreover, when multiple switches are connected in series or parallel, the switching synchronization is also important.…”

Section: Challenges and Trends A Device Developmentmentioning

confidence: 99%

Comprehensive Overview of Power Electronics Intensive Solutions for High-Voltage Pulse Generators

Zhuge,

Liang,

et al. 2024

IEEE Open J. Power Electron.

View full text Add to dashboard Cite

With the advancements in power semiconductors and converters, power electronics based high-voltage pulse generators (HVPG) have emerged due to their advantages of high repetition rate, flexible control, long lifetime, and compact size. However, there is a lack of comprehensive literature review on recent advances in power electronics intensive HVPG technologies. To fill this gap, we present a systematic review on HVPGs. First, HVPGs are classified into different types based on their mechanisms. Each type along with its basic circuits and modifications are introduced. Then, the characteristics, advantages, and disadvantages of these topologies are summarized. Furthermore, the potential applications of HVPGs are explored. The performance of pulse generators mentioned in the literature and commercial products is listed. Finally, future trends and technical challenges in HVPG design and development are discussed. This paper provides a clear understanding of HVPGs and the inspiration of topologies developments to meet the specific requirements. Current state and potential future directions are discussed and summarized to facilitate evolvements in HVPG technology.INDEX TERMS Pulsed power supply, high voltage, pulse generator, power electronics.

show abstract

Section: Challenges and Trends A Device Developmentmentioning

confidence: 99%

Comprehensive Overview of Power Electronics Intensive Solutions for High-Voltage Pulse Generators

Zhuge,

Liang,

et al. 2024

IEEE Open J. Power Electron.

View full text Add to dashboard Cite

show abstract

“…In the framework of ADRC, combined with the control structure of Figure 6, Equations ( 4) and ( 6) can be reformulated to obtain (7):…”

Section: Formation Of Adrc-based Current Controllermentioning

confidence: 99%

“…[5] designed a pulse power supply system with a special structure to develop the technology required for inertial fusion power plants. In addition, the emergence of new silicon carbide devices has improved the application range and performance of pulse power supplies [6][7][8][9][10]. Therefore, pulse power supply technology is in possession of great potential for development.…”

Section: Introductionmentioning

confidence: 99%

Active Disturbance Rejection Control of Full-Bridge DC–DC Converter for a Pulse Power Supply with Controllable Charging Time

Kang,

2023

Electronics

View full text Add to dashboard Cite

In this paper, a control method of a full-bridge DC–DC converter for a pulse power supply with controllable charging time based on Active Disturbance Rejection Control (ADRC) is presented. For this application, the scheme objective is to achieve a flexible charging current to adjust the charging time of the pulse power supply. Due to the existence of switching devices in the system, the dynamic characteristics of the control system are complicated; an LADRC (Linear Active Disturbance Rejection Control) controller is constructed to regulate the charging of the converter current so as to improve the flexibility and dynamic performance of high-voltage pulse power supply. LADRC linearizes the extended state observer and links its parameters to the observer bandwidth to simplify the design of ESO. The proportional coefficient or differential coefficient is connected with the bandwidth of the controller to simplify its tuning, simplify the nonlinear function, more parameters, and complicated adjustment of the ADRC in practical application. The inner loop current regulator assembled is beneficial to the dynamic performance of the loop. The resulting double closed-loop structure improves steady-state and transient current-tracking performance. In addition, stability analysis of the proposed strategy is also performed. The proposed control approach is compared with PI. To verify the feasibility of the proposed scheme, an experimental prototype was constructed and tested to confirm the superiority of the proposed method in terms of dynamic performance.

show abstract

“…Using accurate models of the SiC MOSFET, an initial design for the driver can be accomplished [29,44]. The external parasitic inductances of the tracks (typically around 20 nH) should also be considered for the design [45]. Another model including the inductances is presented in [29], while the power losses can also be modeled through analytical expressions [3].…”

Section: Parasitic Gate Loop Inductormentioning

confidence: 99%

A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

et al. 2021

View full text Add to dashboard Cite

This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are discussed, all of them providing the required gate turn-on and turn-off command signal with galvanic isolation, but also supplying power to the secondary side of the driver by means of magnetic transformers. The resulting solutions, all of them implemented with simple circuitry, enable the integration of the driver into the power cell, allowing for theoretical higher power density values in the final system. The principle of operation of the different solutions is discussed, and then the main relevant implementation details are presented. After that, the operation of the circuits is demonstrated experimentally, by testing a set of prototypes of these drivers. This provides a comprehensive design example that assesses the feasibility of the proposed solutions. Finally, the main results of the performance of the three gate drivers, on an SiC MOSFET-based prototype are presented and compared.

show abstract

Fast SiC Switching Limits for Pulsed Power Applications

Cited by 12 publications

References 15 publications

Comprehensive Overview of Power Electronics Intensive Solutions for High-Voltage Pulse Generators

Comprehensive Overview of Power Electronics Intensive Solutions for High-Voltage Pulse Generators

Active Disturbance Rejection Control of Full-Bridge DC–DC Converter for a Pulse Power Supply with Controllable Charging Time

A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

Contact Info

Product

Resources

About