Fast response InP/InGaAsP heterojunction phototransistors

Fritzsche, D.; Kuphal, E.; Aulbach, R.

doi:10.1049/el:19810126

Cited by 54 publications

(9 citation statements)

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“…j ne optical gains observed are strongly dependent on the incident light power, but reasonable gains (35) at low power In contrast with the reported HBT's, several high speed results are reported for HPT's9, 31,33 The highest cut -off frequency of 10GHz is measured on a twoterminal InP /InGaAs HPT, grown by MBE9.…”

Section: Reported Heterojunction Transistorsmentioning

confidence: 79%

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Progress On InP/InGaAs(P) Heterojunction Bipolar Transistors

1988

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Section: Reported Heterojunction Transistorsmentioning

confidence: 79%

“…This low current gain at low collector currents is observed in the InP /InGaAs(P) system20, 22,24,25,30,31 In the more or less symmetrical DHBT structures the gain in the emitter up mode is generally greater than in the emitter down mode.…”

Section: Reported Heterojunction Transistorsmentioning

confidence: 92%

Progress On InP/InGaAs(P) Heterojunction Bipolar Transistors

1988

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“…Enhanced performance, with the operation at 200MHz at an input optical power of 15pW, was demonstrated by Fritzsche et al 5 Recently, Chandrasekhar et al reported the implementation of a three terminal HPT 6 in an all-bipolar photoreceiver and demonstrated the successful operation at 2 0Hz.7 Although there has been some success in the application of electrical bias to improve the gain and the respond speed of HPT, this method is only useful if the terminal noise of the load is a significant fraction of the total noise current 8• lii cases where the amplified shot noise associated with the base bias current constitutes a significant part of the total noise of the HPT, the signal-to-noise ratio will be seriously degraded. For weak light detection, this increased shot noise will limit the detectivity of the 1-IPT.…”

Section: Working Principle Of the Devicesmentioning

confidence: 91%

<title>Integration of a novel punch-through heterojunction phototransistor with a compatible MODFET</title>

Wang

1994

SPIE Proceedings

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A novel punch-through heterojunction phototransistor (PTHPT) integrated with a compatible modulation doped FET (MODFET) was fabricated. The two terminal operating PTH1F can provide the superior properties of high optical gain and high speed. This is done without introducing an amplified shot noise associated with a base bias current as found in a three terminal operating heterojunction phototransistor (HPT). The PTHPT fabricated in a 0.8p.m GaAs/A1GaAs material system exhibits an optical conversion gain as high as 1250 at an incident optical power as low as 0.5 j.tW. The gain changes less than 15% over a 20 dB range of the incident optical power. The transient measurements show that the PTHPT has a higher response speed than that of a conventional HPT. The compatible MODFETs with 1pm gate lengths exhibit transconductances over 200 ms/mm and a current density of l6OmA/mm. The principle presented here can also be applied to other material systems such as GaSb/A1Sb and InGaAsfInP for long wavelength optical communications.

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“…In an attempt to improve the speed of the HPT, the device has been used as a three terminal detector ͑3T HPT͒ by several workers. [17][18][19][20] It has been established that a 3T HPT can be used as a high-speed photodetector with a reasonably good sensitivity. Several workers have studied the noise behavior of HBT for conventional application of the device as an amplifier.…”

Section: Introductionmentioning

confidence: 99%

Noise modeling of an InP/InGaAs heterojunction bipolar phototransistor

et al. 2003

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We present a theoretical analysis of the noise behavior of a heterojunction bipolar transistor (HBT) used as a three terminal (3T) photodetector. The use of a HBT in the photodetector mode can greatly simplify the fabrication of HBT-based optical receivers in the monolithic form. The present model takes into account the effect of the received light on the intrinsic parameters and various noise components of the HBT when used as a detector. The model enables one to determine the signal-to-noise ratio at the output and also the noise equivalent power of the HBT. The model has been applied for characterization of an InP/ InGaAs HBT used as a 3T photodetector in the 1.55-m wavelength region.

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Fast response InP/InGaAsP heterojunction phototransistors

Cited by 54 publications

References 1 publication

Progress On InP/InGaAs(P) Heterojunction Bipolar Transistors

Progress On InP/InGaAs(P) Heterojunction Bipolar Transistors

<title>Integration of a novel punch-through heterojunction phototransistor with a compatible MODFET</title>

Noise modeling of an InP/InGaAs heterojunction bipolar phototransistor

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