Fast-response hydrogen sensors based on discrete Pt/Pd bimetallic ultra-thin films

Hassan, Kamrul; Uddin, A.S.M. Iftekhar; Chung, Gwiy‐Sang

doi:10.1016/j.snb.2016.05.013

Cited by 76 publications

(34 citation statements)

References 49 publications

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“…In spite of the similar physical and chemical properties, Platinum (Pt) is less affinitive to H 2 molecules compared with Pd, which means Pt might be an alternative to suppress hydrogen absorption and thus not only to accelerate the response/recovery speed, but also to reduce the embrittlement effect. For example, after decorating a thin Pt surface layer onto a Pd nanowire (NW), Penner and co‐workers reported faster response and recovery rates (about 30% faster), as well as smaller resistance changes from PdH x , which is, however, still not enough to meet the practical performance metrics.…”

Section: Introductionmentioning

confidence: 99%

An Ultrasensitive and Ultraselective Hydrogen Sensor Based on Defect‐Dominated Electron Scattering in Pt Nanowire Arrays

Cao

Zhao

Wang

et al. 2018

Adv Materials Inter

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The detection of hydrogen gas has attracted extensive attention due to its wide applications. Here, ultrathin Pt nanowires (3.5 nm) with abundant defects are fabricated by focused ion beam (FIB) for hydrogen detection. Different from the surface‐dominated scattering in previous reports where the resistance of Pt decreases after hydrogenation, the Pt hydrogen sensor prepared by FIB is based on defect‐dominated electron scattering owing to the abundant defects, i.e., the resistance is dominated by defect scattering, while H atoms will diffuse along the defects and thus enhance the electron scattering and resistance. Thanks to the small volume of H atoms (easy to diffuse along defects), the sensor is very sensitive and selective to hydrogen and exhibits fast response–recovery properties. Moreover, the sensitivity can be improved after the response–recovery loops, which may be ascribed to the generation of extra defects (further accelerating H atom diffusion). After response in pure H2 and recovery in air, the sensor has an ultralow limit of detection (for H2 in air) of 10 ppb. The results present a hydrogen sensor with superior sensitivity and selectivity, which would not only facilitate the development of metal hydrogen sensors, but also provide a feasible strategy for hydrogen detection.

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Section: Introductionmentioning

confidence: 99%

An Ultrasensitive and Ultraselective Hydrogen Sensor Based on Defect‐Dominated Electron Scattering in Pt Nanowire Arrays

Cao

Zhao

Wang

et al. 2018

Adv Materials Inter

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“…Therefore, the presence of high magnetic moments in small cobalt clusters such as Co2 and the possibility of funtionalising them to graphene sheets [27], makes them ideal for the development of novel materials for H-sensors or other megneto-electronic apllications in nanotechnology. There have been a few recent reports that have applied bimetallic [28] (e.g. Pt/Pd supported on Al2O3) and monometallic (e.g.…”

Section: Introductionmentioning

confidence: 99%

DFT study of the coverage-dependent chemisorption of molecular H 2 on neutral cobalt dimers

Zeinalipour-Yazdi

2017

Surface Science

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We have studied the coverage-dependent chemisorption of H2 on neutral cobalt dimers and found at θ < 0.4 the chemisorption is dissociative without a precursor-mediated physisorbed state and at 0.4 < θ < 1 it is both molecular and dissociative with a ratio of 6:1. During H2 chemisorption which is entirely side-on there is a very large quenching of the magnetic moment Δμ = 4.9 μB and a linear weakening of the metal-metal bond strength, given by calculated oscillator frequencies. An approximate equation is derived that can be implemented in kinetic models to take account of the coverage-dependent decrease of the adsorption energy of H2 on cobalt clusters. We show that sub-nanometer cobalt clusters when exposed to H2 have strong coverage-dependent properties useful for the development of very sensitive H2-trace gas sensors in the sub-ppm range.

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“…[28][29][30][31] Zhang et al fabricated freestanding pentacene field effect transistors (FETs) by utilizing a polyacrylonitrile dielectric layer to hold the device components and attached it onto rough or even sharp substrates. [39][40][41][42][43] Han et al engineered a foldable indium tin oxide (ITO)-coated glass platform composed of thick and nondeformable parts surrounded by thin and foldable glass, which was selectively etched down to 5 µm, and successfully obtained a foldable substrate without any device failure. [38] In fact, the physical strain (S) acting on the thin metal oxide layer while being bent can be controlled by substrate thickness, which is determined by a simple formula S = d/2r ("d" is the substrate thickness, and "r" is the bending radius).…”

mentioning

confidence: 99%

“…[39][40][41][42][43] Han et al engineered a foldable indium tin oxide (ITO)-coated glass platform composed of thick and nondeformable parts surrounded by thin and foldable glass, which was selectively etched down to 5 µm, and successfully obtained a foldable substrate without any device failure. [39][40][41][42][43] Han et al engineered a foldable indium tin oxide (ITO)-coated glass platform composed of thick and nondeformable parts surrounded by thin and foldable glass, which was selectively etched down to 5 µm, and successfully obtained a foldable substrate without any device failure.…”

mentioning

confidence: 99%

“…[39][40][41][42][43] Han et al engineered a foldable indium tin oxide (ITO)-coated glass platform composed of thick and nondeformable parts surrounded by thin and foldable glass, which was selectively etched down to 5 µm, and successfully obtained a foldable substrate without any device failure. [40] Kim et al fabricated In-Ga-ZnO TFTs on a 1.5 µm thick polyimide substrate and demonstrated its bendability at a bending radius down to 0.25 mm. [40] Kim et al fabricated In-Ga-ZnO TFTs on a 1.5 µm thick polyimide substrate and demonstrated its bendability at a bending radius down to 0.25 mm.…”

mentioning

confidence: 99%

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Extremely Flexible Indium‐Gallium‐Zinc Oxide (IGZO) Based Electronic Devices Placed on an Ultrathin Poly(Methyl Methacrylate) (PMMA) Substrate

Kumaresan

Lee

Lim

et al. 2018

Adv Elect Materials

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deformation is highly recommended for wearable electronics placed on any textile products and/or hand gloves. [20,21] In general, the substrate having the electronic devices plays an important role in their flexibility. To date, polyimide (PI) has been widely utilized as a flexible substrate due to its excellent dielectric property, and good chemical and thermal stability. [22][23][24][25][26][27] However, commercially available PI is not transparent, which limits its use in display applications, and conformal contact of PI substrate onto nonplanar surfaces such as gloves, flexible poly(vinyl chloride) (PVC) tubes, or cotton by using a glue is impractical.To attain both high flexibility and conformal contact of electronic devices, researchers have designed free-standing organic devices, in which a polymer dielectric layer (e.g., polystyrene, polyacrylonitrile, polylactide) or organic active layer (e.g., pentacene) itself acts as a substrate. [28][29][30][31] Zhang et al. fabricated freestanding pentacene field effect transistors (FETs) by utilizing a polyacrylonitrile dielectric layer to hold the device components and attached it onto rough or even sharp substrates. [32] However, as semiconducting polymers are not stable under atmospheric conditions, [33,34] metal oxide-based electronic devices [35][36][37] using thin inorganic semiconductor layers, such as SnO 2 , ZnO, In-Ga-ZnO, MoO 3 , and TiO 2 , are utilized; however, the thin metal oxide layers cannot endure physical strain greater than 1%, while being bent and twisted. [38] In fact, the physical strain (S) acting on the thin metal oxide layer while being bent can be controlled by substrate thickness, which is determined by a simple formula S = d/2r ("d" is the substrate thickness, and "r" is the bending radius).Therefore, metal oxide-based electronic devices placed on top of an ultrathin organic substrate have been pursued to have less physical strain for ultraflexibility. [39][40][41][42][43] Han et al. engineered a foldable indium tin oxide (ITO)-coated glass platform composed of thick and nondeformable parts surrounded by thin and foldable glass, which was selectively etched down to 5 µm, and successfully obtained a foldable substrate without any device failure. [39] Hassan et al. utilized a thin Al 2 O 3 substrate to fabricate flexible metal oxide-based H 2 sensors. [40] Kim et al. fabricated In-Ga-ZnO TFTs on a 1.5 µm thick polyimide substrate and demonstrated its bendability at a bending radius down to 0.25 mm. [41] The flexibility of metal oxide-based electronic devices is severely limited by the thickness of their substrate. To enhance the flexibility of semiconducting metal oxide-based electronic devices, a new and simple way to fabricate indium-gallium-zinc oxide (IGZO)-based electronic devices on an ultrathin (1.9 µm) poly(methyl methacrylate) (PMMA) substrate is introduced. The PMMA layer spin-coated on an unmodified glass slide has no chemical interactions at the interface, resulting in weak adhesion. Therefore, the PMMA layer with the devices...

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Fast-response hydrogen sensors based on discrete Pt/Pd bimetallic ultra-thin films

Cited by 76 publications

References 49 publications

An Ultrasensitive and Ultraselective Hydrogen Sensor Based on Defect‐Dominated Electron Scattering in Pt Nanowire Arrays

An Ultrasensitive and Ultraselective Hydrogen Sensor Based on Defect‐Dominated Electron Scattering in Pt Nanowire Arrays

DFT study of the coverage-dependent chemisorption of molecular H 2 on neutral cobalt dimers

Extremely Flexible Indium‐Gallium‐Zinc Oxide (IGZO) Based Electronic Devices Placed on an Ultrathin Poly(Methyl Methacrylate) (PMMA) Substrate

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