Fast random bits generation based on a single chaotic semiconductor ring laser

Nguimdo, Romain Modeste; Verschaffelt, Guy; Danckaert, Jan; Leijtens, X.J.M.; Bolk, Jeroen; Sande, Guy Van der

doi:10.1364/oe.20.028603

Cited by 91 publications

(30 citation statements)

References 30 publications

(53 reference statements)

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“…For example, chaotic semiconductor lasers have been successfully used for random-number generation [REI09a,OLI11,HAR12,NGU12a], as well as for secure communication [TRO08,LUE11b,UCH12]. Furthermore, their complex dynamics allow for the studying of many generic nonlinear phenomena in a comparably simple experimental setup [LAR10].…”

Section: Amplitude-phase Coupling In Quantum-dot Lasersmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Section: Amplitude-phase Coupling In Quantum-dot Lasersmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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“…In Ref. [45], the authors considered a chaotic SRL with self optical feedback and investigated both numerically and experimentally its characteristics for fast random bit generation. In Ref.…”

Section: Introductionmentioning

confidence: 99%

Theoretical analysis of semiconductor ring lasers with short and long time-delayed optoelectronic and incoherent feedback

Kingni

Sande

Ermakov

et al. 2015

Optics Communications

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“…Thenumberofbitsextractedpersampleofthechaoticlaserintensityhasforthemostpartbeen chosenheuristically 8,11,12 andtherandomnessoftheresultingsequencedeterminedonthebasisof standardstatisticaltests [1][2][3][4][5][6][7][8][9][10][11][12] …”

Section: Introductionmentioning

confidence: 99%

Fast random bit generation with a single chaotic laser subjected to optical feedback

Kim

Choi

et al. 2014

SPIE Proceedings

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Randombitgeneration(RBG)withchaoticsemiconductorlasershasbeenextensivelystudied becauseofitspotentialapplicationsinsecurecommunicationsandhigh-speednumericalsimulations. Researchersinthisfieldhavemainlyfocusedontheimprovementofthegenerationrateandthe compactnessoftherandombitgenerators.Inthispaper,weexperimentallydemonstratethe existenceoftworegimesoffastRBGusingasinglechaoticlasersubjectedtodelayedoptical feedback:thefirstoneisbasedontheextractionofallmin-entropycontainedineachrandomsample, andthesecondoneistodemonstrateapossibilityofincreasingthegenerationratebyextracting55 bitsfromeachvariable.

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Fast random bits generation based on a single chaotic semiconductor ring laser

Cited by 91 publications

References 30 publications

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Theoretical analysis of semiconductor ring lasers with short and long time-delayed optoelectronic and incoherent feedback

Fast random bit generation with a single chaotic laser subjected to optical feedback

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