Fast optical recording media based on semiconductor nanostructures for image recording and processing

Kasherininov, P. G.; Tomasov, A. A.

doi:10.1134/s1063782608110237

Cited by 1 publication

(2 citation statements)

References 6 publications

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“…To date, as high-speed optical recording media, there have been proposed media based on MIS structures with a thin nanoscale layer of thallium dielectric (Tl) with a thickness of 2-5 nm, (M(Tl)S-nanostructure) [12], where a b high-resistance cadmium telluride (CdTe) with a resistivity of 10 7 -10 8 Ohmcm (Fig. 3a) is used as a semiconductor element.…”

Section: Resolution Of Optical Recording Passivated Working Elements In Sem-iconductor Cd1 -Xznxte Nanostruc-turesmentioning

confidence: 99%

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Influence of the Degree of Atomic Hydrogen Passivation of Electrically Active Centers in Cd1 – xZnxTe on the Resolution of Optical Recording of Images with n-p-i-m Nanostructures

Brytan¹,

Peleshchak²,

Uhrun³

et al. 2021

J. Nano- Electron. Phys.

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An electrostatic-deformation model of atomic hydrogen passivation of electrically active centers of the type of compression defects in Cd1 -xZnxTe semiconductors is proposed. It is found that the effect of increasing passivation of electrically active centers in Cd1 -xZnxTe occurs when the concentration of atomic hydrogen NH does not exceed the concentration of acceptors NA (NH  NA), and weakening of the passivation effect is observed when the concentration of atomic hydrogen NH is much higher than the concentration of acceptors NA (NH  NA). The expression for the resolution Ri of optical-registering metal-dielectricsemiconductor nanostructures Cd1 -xZnxTe (0  x  1) is obtained and the resolution value for nonpassivated as well as for passivated in the hydrogen atmosphere semiconductor material Cd0.8Zn0.2Te is calculated, which is R1  6682 and R2  17423, respectively. A method for expanding the spectral range of optical information recording based on n-p-i-m nanostructures by changing the composition (0  x  1) of the solid solution Cd1 -xZnxTe is proposed.

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Section: Resolution Of Optical Recording Passivated Working Elements In Sem-iconductor Cd1 -Xznxte Nanostruc-turesmentioning

confidence: 99%

“…The charge Q formed in the crystal by quanta of absorbing reading light and collected on the electrodes due to the passage of the charge q(z) is determined from the expression [12]  …”

Section: Resolution Of Optical Recording Passivated Working Elements In Sem-iconductor Cd1 -Xznxte Nanostruc-turesmentioning

confidence: 99%

Influence of the Degree of Atomic Hydrogen Passivation of Electrically Active Centers in Cd1 – xZnxTe on the Resolution of Optical Recording of Images with n-p-i-m Nanostructures

Brytan¹,

Peleshchak²,

Uhrun³

et al. 2021

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

show abstract

Fast optical recording media based on semiconductor nanostructures for image recording and processing

Cited by 1 publication

References 6 publications

Influence of the Degree of Atomic Hydrogen Passivation of Electrically Active Centers in Cd1 – xZnxTe on the Resolution of Optical Recording of Images with n-p-i-m Nanostructures

Influence of the Degree of Atomic Hydrogen Passivation of Electrically Active Centers in Cd1 – xZnxTe on the Resolution of Optical Recording of Images with n-p-i-m Nanostructures

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