Fast optical position-sensitive detector for McPherson ESCA-36

Bertrand, P. A.; Tribble, L.E.; Tolentino, Lucio U

doi:10.1063/1.1137380

Cited by 10 publications

(2 citation statements)

References 6 publications

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“…The coupons were removed from the reactor chamber, again in a N2 environment, and placed in a desiccator. The desiccator was transferred to a N2-filled glove bag attached to a modified GCA-McPherson ESCA-36 XPS spectrometer that had a spherical-sector analyzer and a position-sensitive detector (10). The coupons were loaded into the spectrometer, also in a N2 atmosphere, and the spectrometer was evacuated to 1 x 10 -7 torr.…”

Section: Methodsmentioning

confidence: 99%

The Photochemical Oxidation of GaAs

Bertrand

1985

J. Electrochem. Soc.

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The vacuum ultraviolet photochemical oxidation of normalGaAs by N2O (wavelengths of 2537 and 1849Å) was studied by x‐ray photoelectron spectroscopy. We believe the model most consistent with our data involves (i) adsorption of molecular N2O , (ii) dissociation of the N2O on the surface, and (iii) oxidation of the surface by the adsorbed O atoms. The temperature dependence of the overall reaction on the stoichiometric surface is dominated by the temperature dependence of adsorption of N2O . An As‐rich surface oxidizes more slowly, and the reaction saturates; in this case, the rate‐limiting step and the cause of saturation is the oxidation of the surface by adsorbed O atoms. The As‐covered surface does not present the proper sites (As atoms surrounded by Ga atoms) for fast, continued oxidation of normalGaAs .

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Section: Methodsmentioning

confidence: 99%

The Photochemical Oxidation of GaAs

Bertrand

1985

J. Electrochem. Soc.

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“…X-ray photoelectron spectra were obtained with a GCA/McPherson ESCA-36 spectrometer modified by the addition of a position-sensitive, multichannel detector, 8 which increases the signal-to-noise ratio and decreases considerably the time to obtain a spectrum, thereby enabling relatively weak signals to be measured at low takeoff angles. Freshly cleaved molybdenite single crystals were examined by the angleresolved technique to provide references for subsequent measurements and to establish the technique's feasibility.…”

Section: Introductionmentioning

confidence: 99%

Structural Studies of Sputtered MoS(2) Films by Angle-Resolved Photoelectron Spectroscopy.

Fleischauer¹,

Tolentino²

1984

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Concept of an imaging XPS system

Seah

Smith

1988

Surface & Interface Analysis

108

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The concept of an imaging XPS system is analysed and the various approaches discussed. For instrument and design flexibility it is shown that a standard XPS system with an efficient input lens can be used to form a virtual image of the spectrometer input aperture on the sample surface. This defined area of analysis may be rastered across the sample surface using a pre-lens scanning deflector system. In this way good XPS images of 256 X 256 pixels and of 250 pm resolution over an area of diameter 10 mm may be formed in ten minutes. Examples are provided from components for the electronics assembly industry demonstrating that insulators cause no problems. Design considerations are then detailed for optimizing imaging XPS systems at 25 pm and 10 pm spatial resolution involving pre-lens scanning systems and position-sensitive detectors.

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Fast optical position-sensitive detector for McPherson ESCA-36

Abstract: An optical position-sensitive detection system was added to a McPherson ESCA-36 x-ray photoelectron spectrometer. The system contains a multichannel electron multiplier and vidicon TV camera and operates 250 times faster than the original single-channel electron multiplier.

Cited by 10 publications

References 6 publications

The Photochemical Oxidation of GaAs

The Photochemical Oxidation of GaAs

Structural Studies of Sputtered MoS(2) Films by Angle-Resolved Photoelectron Spectroscopy.

Concept of an imaging XPS system

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