Fast neutron detection with silicon carbide semiconductor radiation detectors

Flammang, Robert; Seidel, John G.; Ruddy, F.H.

doi:10.1016/j.nima.2007.04.034

Cited by 74 publications

(40 citation statements)

References 10 publications

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“…[1][2][3][4][5][6] Babcock et al have demonstrated their potential for neutron detection at temperatures up to 800 C. 1) For thermal neutron flux measurements, a thin film of 6 LiF was used up to 25 mm in thickness. 3) McGregor et al showed thermal neutron detection efficiency with respect to the thickness of neutron converter films.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Fabricated Neutron Detectors Based on a SiC Semiconductor

Kim

Park

et al. 2011

Journal of Nuclear Science and Technology

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Wide-band-gap semiconductors such as SiC, AlN, and GaN are promising materials for harsh environment applications due to their high-temperature operation capability. Two types of PIN-type semiconductor neutron detectors based on SiC were designed and fabricated for nuclear power plant (NPP) applications such an in-core reactor neutron flux monitoring and safeguarding nuclear materials. One is for fast neutron detection and the other, which was evaporated with 6 LiF, is for thermal neutron detection. In this study, preliminary tests, such as the determination of I-V and alpha responses, were performed. Reaction probabilities with respect to neutron energies were also calculated by using an MCNPX code for comparison with the experimental results. Responses of the neutrons were measured at the Ex-core Neutron irradiation Facility (ENF) of the High-flux Advanced Neutron Application Reactor (HANARO) research reactor at the Korea Atomic Energy Research Institute (KAERI). Pulse height spectra and count rates were measured with respect to the neutron fluxes from 1:6 Â 10 6 n/cm 2 Ás to 1:9 Â 10 7 n/cm 2 Ás. Also, a 0.99 root-mean-square value of linearity against the fluxes to the count rates was obtained with the fabricated neutron detectors. For a thermal neutron detector, a 3.3% detection efficiency was obtained.

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Section: Introductionmentioning

confidence: 99%

Characteristics of Fabricated Neutron Detectors Based on a SiC Semiconductor

Kim

Park

et al. 2011

Journal of Nuclear Science and Technology

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“…It was also reported that 4H-SiC Schottky diodes could detect X-rays from radio isotopes [31,32]. Besides, the neutron detection by SiC diodes was investigated previously [33,34]. As for light ions and X-rays irradiation into SiC, relatively large number of studies has been already reported.…”

Section: Charge Induced In Sic Diodes By Ion Irradiationmentioning

confidence: 99%

Radiation Response of Silicon Carbide Diodes and Transistors

Ohshima¹,

Onoda²,

Iwamoto³

et al. 2012

Physics and Technology of Silicon Carbide Devices

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“…In the case of silicon carbide (SiC), the combined effects of both 12 C(n,n') 12 C and 28 Si(n,n') 28 Si reactions through the ion recoil are the most important channels for neutron detection, unfortunately the sensitivity for these reactions is low, and thin diodes are to be included in the detector which are sensitive to gamma radiation, also present in nuclear reactions [2]. These difficulties are avoided in the case of diamond based detectors; these detectors, which rely on the 12 C(n,α) 9 Be reaction, are made of a three-layer set in an arrangement very similar to a transistor, by using boron as dopant agent.…”

Section: Introduction mentioning

confidence: 99%

Nuclear Properties of Carbon Nanotubes for Fast Neutron Detection

Gallardo¹,

Pupo²,

Petaccia³

et al. 2018

JEPE

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Fast neutron detection is a subject of great relevance in modern nuclear science and engineering, in particular, with the recent advances in nuclear fusion research, detection of fast neutron became a key issue. Nuclear properties of carbon are of special interest due to its relatively high capture cross section for fast neutrons. Devices made of silicon carbide and diamond are based on these properties, and so are being developed to be used with the proper wiring. In addition, in recent years carbon nano-tubes unveiled their electrical and mechanical properties, which can be exploited for neutron detection. In this work, we use MCNP5 Monte Carlo code to analyze the carbon nuclear properties and discuss the way nano-tubes can be used for fast neutron detection.

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Fast neutron detection with silicon carbide semiconductor radiation detectors

Cited by 74 publications

References 10 publications

Characteristics of Fabricated Neutron Detectors Based on a SiC Semiconductor

Characteristics of Fabricated Neutron Detectors Based on a SiC Semiconductor

Radiation Response of Silicon Carbide Diodes and Transistors

Nuclear Properties of Carbon Nanotubes for Fast Neutron Detection

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