2007
DOI: 10.1016/j.elecom.2006.12.023
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Fast migration of fluoride ions in growing anodic titanium oxide

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Cited by 169 publications
(122 citation statements)
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“…According to Habasaki and his co-workers the development of the titanium fluoride layer might be the result of the fast inward migration of fluoride ions during anodic film growth under high electric field [23]. On the other hand, the development of a titanium-fluoride layer between the anodic film and the titanium substrate may not explain alone the significant differences in the corrosion behavior of the NP and NT-2 films.…”
Section: Discussionmentioning
confidence: 99%
“…According to Habasaki and his co-workers the development of the titanium fluoride layer might be the result of the fast inward migration of fluoride ions during anodic film growth under high electric field [23]. On the other hand, the development of a titanium-fluoride layer between the anodic film and the titanium substrate may not explain alone the significant differences in the corrosion behavior of the NP and NT-2 films.…”
Section: Discussionmentioning
confidence: 99%
“…It was shown by Habazaki et al [27] that the fluoride ions migrate inwards at a rate twice that of O 2− ions. They accumulate at the interface between the alloy and anodic oxide where a thin TiF 4 layer is formed between the metal and the oxide as well as on the outer sides of the pores.…”
Section: The Transfer Of Timentioning
confidence: 96%
“…The distribution of oxygen suggests that it is immobile or migrates more slowly than fluorine. Relatively fast migration of fluorine species has been reported for barrier-type anodic films formed on tantalum and titanium [26,27]. Neodymium and zinc are distributed throughout the thickness of the film, and zinc is enriched at the alloy/film interface.…”
Section: Voltage-time Behaviourmentioning
confidence: 97%