“…However, this problem can be solved by using solid-state switching devices. The use of solid-state switches has been restricted by limitations in their voltage/current rating or switching speed; however, stacking fast medium-voltage devices, such as insulated-gate-bipolar-transistors (IGBTs), to improve the voltage rating can provide a useful alternative to conventional switches such as spark gaps [7,8]. This offers a number of advantages, such as high pulse repetition potential, low maintenance, low cost and better flexibility in terms of voltage and current ratings.…”