IEE Symposium Pulsed Power 2001 2001
DOI: 10.1049/ic:20010123
|View full text |Cite
|
Sign up to set email alerts
|

Fast high-voltage, high-current switching using stacked IGBTs

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2003
2003
2003
2003

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 0 publications
0
1
0
Order By: Relevance
“…However, this problem can be solved by using solid-state switching devices. The use of solid-state switches has been restricted by limitations in their voltage/current rating or switching speed; however, stacking fast medium-voltage devices, such as insulated-gate-bipolar-transistors (IGBTs), to improve the voltage rating can provide a useful alternative to conventional switches such as spark gaps [7,8]. This offers a number of advantages, such as high pulse repetition potential, low maintenance, low cost and better flexibility in terms of voltage and current ratings.…”
Section: Solid-state Marx Generatormentioning
confidence: 99%
“…However, this problem can be solved by using solid-state switching devices. The use of solid-state switches has been restricted by limitations in their voltage/current rating or switching speed; however, stacking fast medium-voltage devices, such as insulated-gate-bipolar-transistors (IGBTs), to improve the voltage rating can provide a useful alternative to conventional switches such as spark gaps [7,8]. This offers a number of advantages, such as high pulse repetition potential, low maintenance, low cost and better flexibility in terms of voltage and current ratings.…”
Section: Solid-state Marx Generatormentioning
confidence: 99%