Fast Growth of Thin Gate Dielectrics by Thermal Oxidation of Si in  N 2 O  Gas Ambient with Low Concentration of  NF 3 Addition

Abstract

The effect of fluorine incorporation on the growt h kinetics of silicon oxidation in N20 ambient was studied. The oxidation was done by using a conventional thermal furnace with 100 ppm NF3 addition to the oxidant. The growth kinetics of oxide was found to follow a power law model. The added NF3 enhances the oxidation rate of the N20 gas process several times higher than without this addition. A low thermal budget oxidation process and high quality thin dielectrics is achievable by using the combined effects of fluorine added to N20 ambient.

The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma

“…It has been demonstrated, e.g., in [1]- [6] that incorporation of small amounts of fluorine into SiO 2 can be an efficient way to improve the electrical parameters of SiO 2 /Si interface. Several ways of fluorine introduction into gate oxide, including among others: in-situ NF 3 oxidation [4] and ion implantation [5], have been tried so far. Another useful technique to improve the quality of low temperatrure SiO 2 is high thermal annealing process.…”

Electrical properties and modeling of ultrathin impurity-doped silicon dioxides

“…16 -18 In order to obtain an improved oxide film carrying the properties mentioned above, it is our strong motive to incorporate both F and N into silicon dioxide to attain an oxide of remarkable quality with mixed characteristics. In fact, many investigators have studied the possibility of incorporating both F and N into silicon dioxide by using several different techniques: ͑i͒ thermal oxidation of Si by N 2 O and NF 3 gases, 19 ͑ii͒ N 2 O plasma treatment on plasma-enhanced chemical vapor deposition ͑PECVD͒-grown fluorinated silica glass ͑FSG͒, 20 ͑iii͒ NH 3 -added PECVD-grown FSG, 21 and ͑iv͒ fluorination ϩnitridation under microwave plasma for SiO 2 . 22 Concurrently, the Auger depth profile, the adhesion properties of SiOFN to Si, bonding network of oxide, and surface roughness of SiOFN were fully discussed.…”

Characterization on the current-voltage curves of ultrathin silicon dioxides incorporated with fluorine and/or nitrogen

“…In order to obtain an improved oxide film possessing the properties mentioned above, it is our strong intention to incorporate both F and N (denoted as SiOFN) into silicon dioxide to attain an oxide of remarkable quality with mixed characteristics. In fact, many investigators have studied the possibility of incorporating both F and N into silicon dioxide by using several different techniques: (i) thermal oxidation of Si by N 2 O and NF 3 gases [15], (ii) N 2 O plasma treatment on PECVD-grown fluorinated silica glass (FSG) [16], (iii) NH 3 -added PECVD-grown FSG [17], and (iv) fluorination + nitridation under microwave plasma for SiO 2 [18]. Concurrently, the Auger depth profile (produced by Auger electron spectroscopy (AES)), the adhesion properties of SiOFN to Si, oxide bonding network and surface roughness of SiOFN were fully discussed.…”