30th Annual Conference of IEEE Industrial Electronics Society, 2004. IECON 2004
DOI: 10.1109/iecon.2004.1433441
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Fast gate drive for SiC-JFET using a conventional driver for MOSFETs and additional protections

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Cited by 19 publications
(9 citation statements)
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“…For the loss calculation, simulation results for the inductor current during nominal operation are suitable. The Simplorer simulation (shown in Figure 8(a)) of the SiC-ZSI uses the values identified in (5)- (8). The power dissipation calculated by Matlab in each of the two inductor cores is 57 W. This is not satisfactory due to the heating of the cores.…”
Section: Dimensioning Of the Dc-link Componentsmentioning
confidence: 99%
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“…For the loss calculation, simulation results for the inductor current during nominal operation are suitable. The Simplorer simulation (shown in Figure 8(a)) of the SiC-ZSI uses the values identified in (5)- (8). The power dissipation calculated by Matlab in each of the two inductor cores is 57 W. This is not satisfactory due to the heating of the cores.…”
Section: Dimensioning Of the Dc-link Componentsmentioning
confidence: 99%
“…As the avalanche gate voltage V GS,av is only about 7 V below V po , V GS,o f f must be adjusted very accurately. In [8] a "current gate driver" and a "voltage gate driver" are presented. Based on the results of that previous work, the output stage of the proposed gate drive should be a "voltage gate driver".…”
Section: ) Configuration Of the Gate Drivermentioning
confidence: 99%
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