Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes

Ji, Shiyang; Kosugi, Ryoji; Kojima, Kazutoshi; Adachi, Keita; Kawada, Y.; Mochizuki, Kazuhiro; Yonezawa, Yoshiyuki; Yoshida, Sadafumi; Okumura, Hajime

doi:10.1016/j.jcrysgro.2020.125809

Cited by 3 publications

(1 citation statement)

References 18 publications

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“…The challenge with the growth of epilayers on separate structures such as this is promoting the coalescence of the individual columns into a continuous film; however, this has been achieved through the introduction of sufficiently high levels of HCl into RP-CVD during epitaxy, which results in more ordered growth and enables the fusion of layers grown on the Si structures. A similar technique is used in the process of 4H-SiC trench refill epitaxy, whereby additional HCl is added to the epitaxial process to modify the growth and etch rates of 4H-SiC on different faces of the patterned structure [19,20].…”

Section: Discussionmentioning

confidence: 99%

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Colston,

Turner,

Renz

et al. 2024

Materials

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We demonstrate the growth of 3C-SiC with reduced planar defects on a micro-scale compliant substrate. Heteroepitaxial growth of 3C-SiC on trenches with a width and separation of 2 µm, etched into a Si(001) substrate, is found to suppress defect propagation through the epilayer. Stacking faults and other planar defects are channeled away from the center of the patterned structures, which are rounded through the use of H2 annealing at 1100 °C. Void formation between the columns of 3C-SiC growth acts as a termination point for defects, and coalescence of these columns into a continuous epilayer is promoted through the addition of HCl in the growth phase. The process of fabricating these compliant substrates utilizes standard processing techniques found within the semiconductor industry and is independent of the substrate orientation and offcut.

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Section: Discussionmentioning

confidence: 99%

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Colston,

Turner,

Renz

et al. 2024

Materials

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Epitaxial trench refill of 4H-SiC by chlorinated chemistry

Colston,

Turner,

Renz

et al. 2024

Applied Physics Letters

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Trench epitaxy of 4H-SiC is investigated with the supersaturation of chlorinated chemistry at a growth temperature of 1550 °C. Coupled with a lower growth temperature than has been previously reported, the integrity of the 4H-SiC trenches is retained and minimal rounding effects of H2 annealing prior to growth are observed. The system gives different growth rates of materials on the various crystal faces of the trenches and can be used to improve the refilling process, resulting in the reduced void formation. The addition of excessive levels of HCl can suppress trench epitaxy by reducing the growth rate on the sidewalls of trenches in favor of growth on the surface. The processes demonstrated offer a scalable and reproducible method to fabricate SiC-based superjunction device structures for applications in high voltage power electronics.

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High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor

Gong,

Xie,

et al. 2024

Coatings

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In this paper, using a self-developed silicon carbide epitaxial reactor, we obtained high-quality 6-inch epitaxial wafers with doping concentration uniformity less than 2%, thickness uniformity less than 1% and roughness less than 0.2 nm on domestic substrates, which meets the application requirements of high-quality Schottky Barrier Diode (SBD) and Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) devices. We found that increasing the carrier gas flow rate can minimize source gas depletion and optimize the doping uniformity of the 6-inch epitaxial wafer from over 5% to less than 2%. Moreover, reducing the C/Si ratio significantly can suppress the “two-dimensional nucleation growth mode” and improve the wafer surface roughness Ra from 1.82 nm to 0.16 nm.

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Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes

Cited by 3 publications

References 18 publications

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Epitaxial trench refill of 4H-SiC by chlorinated chemistry

High-Quality 4H-SiC Homogeneous Epitaxy via Homemade Horizontal Hot-Wall Reactor

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